JPS5419361A - Forming method of electrodes for semiconductor devices - Google Patents
Forming method of electrodes for semiconductor devicesInfo
- Publication number
- JPS5419361A JPS5419361A JP8455677A JP8455677A JPS5419361A JP S5419361 A JPS5419361 A JP S5419361A JP 8455677 A JP8455677 A JP 8455677A JP 8455677 A JP8455677 A JP 8455677A JP S5419361 A JPS5419361 A JP S5419361A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- semiconductor devices
- forming method
- melting point
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
Abstract
PURPOSE: To selectively form low melting point metal layers only on electrode metals by making ingenious use of the goodness or not of wetting of a low melting point metal to Si substrates and electrode metals making ohmic contact therewith.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8455677A JPS5419361A (en) | 1977-07-13 | 1977-07-13 | Forming method of electrodes for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8455677A JPS5419361A (en) | 1977-07-13 | 1977-07-13 | Forming method of electrodes for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5419361A true JPS5419361A (en) | 1979-02-14 |
JPS5758781B2 JPS5758781B2 (en) | 1982-12-11 |
Family
ID=13833908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8455677A Granted JPS5419361A (en) | 1977-07-13 | 1977-07-13 | Forming method of electrodes for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5419361A (en) |
-
1977
- 1977-07-13 JP JP8455677A patent/JPS5419361A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5758781B2 (en) | 1982-12-11 |
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