JPS54162984A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS54162984A JPS54162984A JP7246578A JP7246578A JPS54162984A JP S54162984 A JPS54162984 A JP S54162984A JP 7246578 A JP7246578 A JP 7246578A JP 7246578 A JP7246578 A JP 7246578A JP S54162984 A JPS54162984 A JP S54162984A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pipe
- pressure
- resistance layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To obtain the output free from the external temperature effect by supporting the pressure-sensitive element composed of the small-thickness diaphragm with which the diffusion resistance layer is formed to the semiconductor substrate by the semiconductor substrate possessing the resistance layer or the heating unit of the PN junction.
CONSTITUTION: Thin diaphragm 2a is formed at the center part of N-type Si substrate 2, and then P-type region 3 is formed by diffusion on the surface of 2a. Thus, pressure-sensitive element 1 is obtained through utilization of the piezo-resistance effect. Element 1 is then adhered airtight onto Si substrate 4 which is the resistance layer generating the heat with supply of the current via junction layer 5 composed of the Au-Si eutectic alloy. After this, pressure intoduction pipe 6 made of metal is attached to pierced hole 4a provided at the center part of substrate 4, and pipe 6 is then stuck to package component 8 via hermetic sealed part 7. Then terminal 9 and 10 are provided to component 8 to be connected to region 3 and junction layer 5 via line 11 and 12 respectively. After this, heater source 13 is connected between terminal 10 and pipe 6.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246578A JPS54162984A (en) | 1978-06-15 | 1978-06-15 | Semiconductor pressure converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7246578A JPS54162984A (en) | 1978-06-15 | 1978-06-15 | Semiconductor pressure converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162984A true JPS54162984A (en) | 1979-12-25 |
Family
ID=13490074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7246578A Pending JPS54162984A (en) | 1978-06-15 | 1978-06-15 | Semiconductor pressure converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162984A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747048U (en) * | 1980-08-29 | 1982-03-16 | ||
| JPH0264430A (en) * | 1988-08-31 | 1990-03-05 | Hitachi Ltd | Semiconductor pressure converter |
| JP2018066581A (en) * | 2016-10-17 | 2018-04-26 | 株式会社デンソー | Semiconductor device |
-
1978
- 1978-06-15 JP JP7246578A patent/JPS54162984A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747048U (en) * | 1980-08-29 | 1982-03-16 | ||
| JPH0264430A (en) * | 1988-08-31 | 1990-03-05 | Hitachi Ltd | Semiconductor pressure converter |
| JP2018066581A (en) * | 2016-10-17 | 2018-04-26 | 株式会社デンソー | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55103439A (en) | Semiconductor pressure sensor | |
| JPS5524423A (en) | Semiconductor pressure sensor | |
| GB967263A (en) | A process for use in the production of a semi-conductor device | |
| JPS54162984A (en) | Semiconductor pressure converter | |
| JPS54142976A (en) | Manufacture of semiconductor device | |
| JPS56165361A (en) | Semiconductor pressure converter | |
| JPS5543415A (en) | Semiconductor pressure converter | |
| JPS54128277A (en) | Semiconductor device | |
| JPS57136132A (en) | Semiconductor pressure transducer | |
| JPS55103440A (en) | Semiconductor pressure sensor | |
| GB835865A (en) | Improvements in or relating to crystal rectifiers and methods of manufacture thereof | |
| JPS5518021A (en) | Method of die bonding of semiconductor pellet | |
| JPS56148870A (en) | Semiconductor presssure converter | |
| JPS5482177A (en) | Semiconductor device and its manufacture | |
| JPS54102969A (en) | Semiconductor device | |
| JPS547271A (en) | Semiconductor electrode structure | |
| JPS556816A (en) | Semiconductor pressure converter | |
| JPS5432265A (en) | Thermal pressing method of semiconductor element | |
| JPS54128675A (en) | Semiconductor device | |
| JPS57171235A (en) | Semiconductor pressure converter | |
| JPS5458380A (en) | Zener diode | |
| JPS5411690A (en) | Semiconductor laser unit | |
| JPS54145476A (en) | Package for semiconductor | |
| GB927864A (en) | Improvements in or relating to semi-conductor devices | |
| JPS5575247A (en) | Semiconductor device package |