JPS5575247A - Semiconductor device package - Google Patents

Semiconductor device package

Info

Publication number
JPS5575247A
JPS5575247A JP15032578A JP15032578A JPS5575247A JP S5575247 A JPS5575247 A JP S5575247A JP 15032578 A JP15032578 A JP 15032578A JP 15032578 A JP15032578 A JP 15032578A JP S5575247 A JPS5575247 A JP S5575247A
Authority
JP
Japan
Prior art keywords
semiconductor device
metallized
device package
bearer
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15032578A
Other languages
Japanese (ja)
Inventor
Kazuo Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15032578A priority Critical patent/JPS5575247A/en
Publication of JPS5575247A publication Critical patent/JPS5575247A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To stabilize the thermal resistance of a semiconductor device package by metallizing gold (Au) merely on the adhesive portion of the semiconductor device of a bearer for connecting electrodes to the semiconductor device to thereby omit the metallized nickel (Ni).
CONSTITUTION: Nickel (Ni) is not metallized but gold (Au) is metallized at 8 on the surface 9 adhered with a semiconductor chip 1 thereto of a bearer 5. Accordingly, no Si-Ni alloy layer is produced between the surface 9 and the chip 1. Thus, even if this semiconductor device is used at high temperature for long term, its thermal resistance is stabilized to hardly occur a fault thereat.
COPYRIGHT: (C)1980,JPO&Japio
JP15032578A 1978-12-04 1978-12-04 Semiconductor device package Pending JPS5575247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15032578A JPS5575247A (en) 1978-12-04 1978-12-04 Semiconductor device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15032578A JPS5575247A (en) 1978-12-04 1978-12-04 Semiconductor device package

Publications (1)

Publication Number Publication Date
JPS5575247A true JPS5575247A (en) 1980-06-06

Family

ID=15494543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15032578A Pending JPS5575247A (en) 1978-12-04 1978-12-04 Semiconductor device package

Country Status (1)

Country Link
JP (1) JPS5575247A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026540A1 (en) * 1995-02-21 1996-08-29 Japan Energy Corporation Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026540A1 (en) * 1995-02-21 1996-08-29 Japan Energy Corporation Semiconductor device

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