JPS54162440A - Variable attenuator circuit - Google Patents

Variable attenuator circuit

Info

Publication number
JPS54162440A
JPS54162440A JP7094078A JP7094078A JPS54162440A JP S54162440 A JPS54162440 A JP S54162440A JP 7094078 A JP7094078 A JP 7094078A JP 7094078 A JP7094078 A JP 7094078A JP S54162440 A JPS54162440 A JP S54162440A
Authority
JP
Japan
Prior art keywords
voltage
diodes
variable attenuator
gate
2vth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7094078A
Other languages
Japanese (ja)
Other versions
JPS6113410B2 (en
Inventor
Harushige Nakagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7094078A priority Critical patent/JPS54162440A/en
Publication of JPS54162440A publication Critical patent/JPS54162440A/en
Publication of JPS6113410B2 publication Critical patent/JPS6113410B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor

Landscapes

  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To obtain a non-step attenuation characteristic by providing a DC voltage shift circuit in the gate bias voltage circuit in the variable attenuator using a MOSFET which has a gate protection diode. CONSTITUTION:In the variable attenuator which consists of P channel MOSFET 20 and N channel MOSFET 21 having complementary characteriscs and is provided with input signal source 15 and output terminal 27, a DC voltage shift circuit consisting of DC voltage sources 22 and 23, resistances 24 and 25, and diodes 26 and 27 is provided between their gate electrodes 1 and 5 and gate bias voltage VGS 16, and output terminals 28 and 29 are connected to gate electrodes 1 and 5 respectively. Then, if threshold voltage VTH is equal among FETs 20 and 21, diodes 26 and 27, and protection diodes 11 and 14 of FETs 20 and 21, diodes 11 and 14 are non-conductive to correct the FET threshold voltage in a range of voltage VGS 16 from -2VTH to 2VTH, so that a non-step sttenuation characteristic can be obtained.
JP7094078A 1978-06-14 1978-06-14 Variable attenuator circuit Granted JPS54162440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7094078A JPS54162440A (en) 1978-06-14 1978-06-14 Variable attenuator circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7094078A JPS54162440A (en) 1978-06-14 1978-06-14 Variable attenuator circuit

Publications (2)

Publication Number Publication Date
JPS54162440A true JPS54162440A (en) 1979-12-24
JPS6113410B2 JPS6113410B2 (en) 1986-04-14

Family

ID=13445993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7094078A Granted JPS54162440A (en) 1978-06-14 1978-06-14 Variable attenuator circuit

Country Status (1)

Country Link
JP (1) JPS54162440A (en)

Also Published As

Publication number Publication date
JPS6113410B2 (en) 1986-04-14

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