JPS54153791A - Method and apparatus for watching and controlling sputtering adhesion - Google Patents

Method and apparatus for watching and controlling sputtering adhesion

Info

Publication number
JPS54153791A
JPS54153791A JP6335279A JP6335279A JPS54153791A JP S54153791 A JPS54153791 A JP S54153791A JP 6335279 A JP6335279 A JP 6335279A JP 6335279 A JP6335279 A JP 6335279A JP S54153791 A JPS54153791 A JP S54153791A
Authority
JP
Japan
Prior art keywords
watching
controlling sputtering
adhesion
sputtering adhesion
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6335279A
Other languages
English (en)
Inventor
Shii Teizone Toomasu
Esu Ratosu Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gould Inc
Original Assignee
Gould Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gould Inc filed Critical Gould Inc
Publication of JPS54153791A publication Critical patent/JPS54153791A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
    • C23C14/0042Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
JP6335279A 1978-05-24 1979-05-24 Method and apparatus for watching and controlling sputtering adhesion Pending JPS54153791A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/908,808 US4172020A (en) 1978-05-24 1978-05-24 Method and apparatus for monitoring and controlling sputter deposition processes

Publications (1)

Publication Number Publication Date
JPS54153791A true JPS54153791A (en) 1979-12-04

Family

ID=25426264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6335279A Pending JPS54153791A (en) 1978-05-24 1979-05-24 Method and apparatus for watching and controlling sputtering adhesion

Country Status (4)

Country Link
US (1) US4172020A (ja)
EP (1) EP0005641A1 (ja)
JP (1) JPS54153791A (ja)
CA (1) CA1119554A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597467A (en) * 1979-01-18 1980-07-24 Citizen Watch Co Ltd Ion plating equipment
JPS596376A (ja) * 1982-06-30 1984-01-13 Anelva Corp スパツタ装置
JPS5989768A (ja) * 1982-11-12 1984-05-24 Fujitsu Ltd 薄膜の形成方法
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
JPS6350467A (ja) * 1986-08-18 1988-03-03 Fujitsu Ltd スパツタリング装置
JPS63262458A (ja) * 1987-04-20 1988-10-28 Shinko Electric Co Ltd 直流電源装置
JPS6431959A (en) * 1987-07-27 1989-02-02 Yokogawa Electric Corp Formation of thin compound film
JPS6426366U (ja) * 1988-04-28 1989-02-14
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325048A (en) * 1980-02-29 1982-04-13 Gould Inc. Deformable flexure element for strain gage transducer and method of manufacture
US4368689A (en) * 1980-12-29 1983-01-18 Rockwell International Corporation Beam source for deposition of thin film alloys
US4336119A (en) * 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4396478A (en) * 1981-06-15 1983-08-02 Aizenshtein Anatoly G Method of control of chemico-thermal treatment of workpieces in glow discharge and a device for carrying out the method
US4394237A (en) * 1981-07-17 1983-07-19 Bell Telephone Laboratories, Incorporated Spectroscopic monitoring of gas-solid processes
US4419203A (en) * 1982-03-05 1983-12-06 International Business Machines Corporation Apparatus and method for neutralizing ion beams
US4466872A (en) * 1982-12-23 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for depositing a continuous film of minimum thickness
US4428811A (en) 1983-04-04 1984-01-31 Borg-Warner Corporation Rapid rate reactive sputtering of a group IVb metal
US4672203A (en) * 1983-05-20 1987-06-09 Inficon Leybold-Heraeus, Inc. Two stage valve for use in pressure converter
US4553853A (en) * 1984-02-27 1985-11-19 International Business Machines Corporation End point detector for a tin lead evaporator
US4845041A (en) * 1985-11-20 1989-07-04 Analyte Corporation Atomic-absorption sputtering chamber and system
DE3630737C1 (de) * 1986-09-10 1987-11-05 Philips & Du Pont Optical Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages
DE3709177A1 (de) * 1987-03-20 1988-09-29 Leybold Ag Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden
US4913790A (en) * 1988-03-25 1990-04-03 Tokyo Electron Limited Treating method
JPH01268859A (ja) * 1988-04-20 1989-10-26 Casio Comput Co Ltd 透明導電膜の形成方法および形成装置
US4902398A (en) * 1988-04-27 1990-02-20 American Thim Film Laboratories, Inc. Computer program for vacuum coating systems
US5126028A (en) * 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
US5225273A (en) * 1989-12-28 1993-07-06 Teijin Limited Transparent electroconductive laminate
JPH049748A (ja) * 1990-04-27 1992-01-14 Sharp Corp ニオブ酸リチウム薄膜の評価方法およびその製造装置
DE4138927C2 (de) * 1991-11-27 2000-01-13 Leybold Ag Vorrichtung zur Bestimmung der Gaskonzentration in einer Vakuumkammer
DE59309018D1 (de) * 1992-07-02 1998-11-05 Balzers Hochvakuum Verfahren zur Herstellung einer Metalloxidschicht, Vakuumbehandlungsanlage hierfür sowie mit mindestens einer Metalloxidschicht beschichteter Teil
US5911856A (en) * 1993-09-03 1999-06-15 Canon Kabushiki Kaisha Method for forming thin film
JPH08220304A (ja) 1995-02-13 1996-08-30 Tadahiro Omi 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法
DE59702062D1 (de) 1996-05-30 2000-08-24 Siemens Ag Beschichtungsvorrichtung und verfahren zur beschichtung eines bauteils mit einer wärmedämmschicht
JPH09324268A (ja) * 1996-06-07 1997-12-16 Fujitsu Ltd 真空処理装置
JP3429957B2 (ja) * 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
JP3411814B2 (ja) * 1998-03-26 2003-06-03 東京エレクトロン株式会社 プラズマ処理装置
US6179039B1 (en) 1999-03-25 2001-01-30 Visteon Global Technologies, Inc. Method of reducing distortion in a spray formed rapid tool
EP1573084B1 (en) * 2002-12-16 2006-09-20 iFire Technology Corp. Composite sputter target and phosphor deposition method
DE102013109973B4 (de) * 2013-09-11 2019-09-19 VON ARDENNE Asset GmbH & Co. KG Verfahren zur Regelung eines Magnetronsputter-Prozesses
WO2020197894A1 (en) 2019-03-22 2020-10-01 Applied Materials, Inc. Method and apparatus for deposition of multilayer device with superconductive film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3005911A (en) * 1957-12-17 1961-10-24 Standard Oil Co Gaseous mixture analyzer
FR2144951A5 (ja) * 1971-07-05 1973-02-16 Commissariat Energie Atomique
US3738926A (en) * 1972-03-28 1973-06-12 Bell Canada Method and apparatus for controlling the electrical properties of sputtered films
US4036167A (en) * 1976-01-30 1977-07-19 Inficon Leybold-Heraeus Inc. Apparatus for monitoring vacuum deposition processes
DE2620391A1 (de) * 1976-05-08 1977-11-10 Berghaus Ionit Anstalt Regeln des gasdrucks bei stromstarken glimmentladungen
FR2370320A1 (fr) * 1976-11-05 1978-06-02 Thomson Csf Systeme de regulation de flux moleculaires, et son application aux techniques de co-evaporation

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597467A (en) * 1979-01-18 1980-07-24 Citizen Watch Co Ltd Ion plating equipment
JPS596376A (ja) * 1982-06-30 1984-01-13 Anelva Corp スパツタ装置
JPS5989768A (ja) * 1982-11-12 1984-05-24 Fujitsu Ltd 薄膜の形成方法
JPS6321749B2 (ja) * 1982-11-12 1988-05-09 Fujitsu Ltd
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
JPH021230B2 (ja) * 1985-04-15 1990-01-10 Hitachi Ltd
JPS6350467A (ja) * 1986-08-18 1988-03-03 Fujitsu Ltd スパツタリング装置
JPS63262458A (ja) * 1987-04-20 1988-10-28 Shinko Electric Co Ltd 直流電源装置
JPS6431959A (en) * 1987-07-27 1989-02-02 Yokogawa Electric Corp Formation of thin compound film
JPH01108378A (ja) * 1987-10-21 1989-04-25 Mitsubishi Electric Corp スパツタ装置
JPS6426366U (ja) * 1988-04-28 1989-02-14

Also Published As

Publication number Publication date
EP0005641A1 (en) 1979-11-28
CA1119554A (en) 1982-03-09
US4172020A (en) 1979-10-23

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