JPS54153791A - Method and apparatus for watching and controlling sputtering adhesion - Google Patents
Method and apparatus for watching and controlling sputtering adhesionInfo
- Publication number
- JPS54153791A JPS54153791A JP6335279A JP6335279A JPS54153791A JP S54153791 A JPS54153791 A JP S54153791A JP 6335279 A JP6335279 A JP 6335279A JP 6335279 A JP6335279 A JP 6335279A JP S54153791 A JPS54153791 A JP S54153791A
- Authority
- JP
- Japan
- Prior art keywords
- watching
- controlling sputtering
- adhesion
- sputtering adhesion
- controlling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/908,808 US4172020A (en) | 1978-05-24 | 1978-05-24 | Method and apparatus for monitoring and controlling sputter deposition processes |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54153791A true JPS54153791A (en) | 1979-12-04 |
Family
ID=25426264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6335279A Pending JPS54153791A (en) | 1978-05-24 | 1979-05-24 | Method and apparatus for watching and controlling sputtering adhesion |
Country Status (4)
Country | Link |
---|---|
US (1) | US4172020A (ja) |
EP (1) | EP0005641A1 (ja) |
JP (1) | JPS54153791A (ja) |
CA (1) | CA1119554A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5597467A (en) * | 1979-01-18 | 1980-07-24 | Citizen Watch Co Ltd | Ion plating equipment |
JPS596376A (ja) * | 1982-06-30 | 1984-01-13 | Anelva Corp | スパツタ装置 |
JPS5989768A (ja) * | 1982-11-12 | 1984-05-24 | Fujitsu Ltd | 薄膜の形成方法 |
JPS61238958A (ja) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | 複合薄膜形成法及び装置 |
JPS6350467A (ja) * | 1986-08-18 | 1988-03-03 | Fujitsu Ltd | スパツタリング装置 |
JPS63262458A (ja) * | 1987-04-20 | 1988-10-28 | Shinko Electric Co Ltd | 直流電源装置 |
JPS6431959A (en) * | 1987-07-27 | 1989-02-02 | Yokogawa Electric Corp | Formation of thin compound film |
JPS6426366U (ja) * | 1988-04-28 | 1989-02-14 | ||
JPH01108378A (ja) * | 1987-10-21 | 1989-04-25 | Mitsubishi Electric Corp | スパツタ装置 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4325048A (en) * | 1980-02-29 | 1982-04-13 | Gould Inc. | Deformable flexure element for strain gage transducer and method of manufacture |
US4368689A (en) * | 1980-12-29 | 1983-01-18 | Rockwell International Corporation | Beam source for deposition of thin film alloys |
US4336119A (en) * | 1981-01-29 | 1982-06-22 | Ppg Industries, Inc. | Method of and apparatus for control of reactive sputtering deposition |
US4396478A (en) * | 1981-06-15 | 1983-08-02 | Aizenshtein Anatoly G | Method of control of chemico-thermal treatment of workpieces in glow discharge and a device for carrying out the method |
US4394237A (en) * | 1981-07-17 | 1983-07-19 | Bell Telephone Laboratories, Incorporated | Spectroscopic monitoring of gas-solid processes |
US4419203A (en) * | 1982-03-05 | 1983-12-06 | International Business Machines Corporation | Apparatus and method for neutralizing ion beams |
US4466872A (en) * | 1982-12-23 | 1984-08-21 | At&T Technologies, Inc. | Methods of and apparatus for depositing a continuous film of minimum thickness |
US4428811A (en) | 1983-04-04 | 1984-01-31 | Borg-Warner Corporation | Rapid rate reactive sputtering of a group IVb metal |
US4672203A (en) * | 1983-05-20 | 1987-06-09 | Inficon Leybold-Heraeus, Inc. | Two stage valve for use in pressure converter |
US4553853A (en) * | 1984-02-27 | 1985-11-19 | International Business Machines Corporation | End point detector for a tin lead evaporator |
US4845041A (en) * | 1985-11-20 | 1989-07-04 | Analyte Corporation | Atomic-absorption sputtering chamber and system |
DE3630737C1 (de) * | 1986-09-10 | 1987-11-05 | Philips & Du Pont Optical | Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages |
DE3709177A1 (de) * | 1987-03-20 | 1988-09-29 | Leybold Ag | Verfahren und vorrichtung zur regelung der reaktiven schichtabscheidung auf substraten mittels magnetronkatoden |
US4913790A (en) * | 1988-03-25 | 1990-04-03 | Tokyo Electron Limited | Treating method |
JPH01268859A (ja) * | 1988-04-20 | 1989-10-26 | Casio Comput Co Ltd | 透明導電膜の形成方法および形成装置 |
US4902398A (en) * | 1988-04-27 | 1990-02-20 | American Thim Film Laboratories, Inc. | Computer program for vacuum coating systems |
US5126028A (en) * | 1989-04-17 | 1992-06-30 | Materials Research Corporation | Sputter coating process control method and apparatus |
US5087815A (en) * | 1989-11-08 | 1992-02-11 | Schultz J Albert | High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis |
US5225273A (en) * | 1989-12-28 | 1993-07-06 | Teijin Limited | Transparent electroconductive laminate |
JPH049748A (ja) * | 1990-04-27 | 1992-01-14 | Sharp Corp | ニオブ酸リチウム薄膜の評価方法およびその製造装置 |
DE4138927C2 (de) * | 1991-11-27 | 2000-01-13 | Leybold Ag | Vorrichtung zur Bestimmung der Gaskonzentration in einer Vakuumkammer |
DE59309018D1 (de) * | 1992-07-02 | 1998-11-05 | Balzers Hochvakuum | Verfahren zur Herstellung einer Metalloxidschicht, Vakuumbehandlungsanlage hierfür sowie mit mindestens einer Metalloxidschicht beschichteter Teil |
US5911856A (en) * | 1993-09-03 | 1999-06-15 | Canon Kabushiki Kaisha | Method for forming thin film |
JPH08220304A (ja) | 1995-02-13 | 1996-08-30 | Tadahiro Omi | 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法 |
DE59702062D1 (de) | 1996-05-30 | 2000-08-24 | Siemens Ag | Beschichtungsvorrichtung und verfahren zur beschichtung eines bauteils mit einer wärmedämmschicht |
JPH09324268A (ja) * | 1996-06-07 | 1997-12-16 | Fujitsu Ltd | 真空処理装置 |
JP3429957B2 (ja) * | 1996-08-28 | 2003-07-28 | 松下電器産業株式会社 | スパッタリング方法及び装置 |
JP3411814B2 (ja) * | 1998-03-26 | 2003-06-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6179039B1 (en) | 1999-03-25 | 2001-01-30 | Visteon Global Technologies, Inc. | Method of reducing distortion in a spray formed rapid tool |
EP1573084B1 (en) * | 2002-12-16 | 2006-09-20 | iFire Technology Corp. | Composite sputter target and phosphor deposition method |
DE102013109973B4 (de) * | 2013-09-11 | 2019-09-19 | VON ARDENNE Asset GmbH & Co. KG | Verfahren zur Regelung eines Magnetronsputter-Prozesses |
WO2020197894A1 (en) | 2019-03-22 | 2020-10-01 | Applied Materials, Inc. | Method and apparatus for deposition of multilayer device with superconductive film |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3005911A (en) * | 1957-12-17 | 1961-10-24 | Standard Oil Co | Gaseous mixture analyzer |
FR2144951A5 (ja) * | 1971-07-05 | 1973-02-16 | Commissariat Energie Atomique | |
US3738926A (en) * | 1972-03-28 | 1973-06-12 | Bell Canada | Method and apparatus for controlling the electrical properties of sputtered films |
US4036167A (en) * | 1976-01-30 | 1977-07-19 | Inficon Leybold-Heraeus Inc. | Apparatus for monitoring vacuum deposition processes |
DE2620391A1 (de) * | 1976-05-08 | 1977-11-10 | Berghaus Ionit Anstalt | Regeln des gasdrucks bei stromstarken glimmentladungen |
FR2370320A1 (fr) * | 1976-11-05 | 1978-06-02 | Thomson Csf | Systeme de regulation de flux moleculaires, et son application aux techniques de co-evaporation |
-
1978
- 1978-05-24 US US05/908,808 patent/US4172020A/en not_active Expired - Lifetime
-
1979
- 1979-05-11 CA CA000327450A patent/CA1119554A/en not_active Expired
- 1979-05-21 EP EP79300897A patent/EP0005641A1/en not_active Withdrawn
- 1979-05-24 JP JP6335279A patent/JPS54153791A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5597467A (en) * | 1979-01-18 | 1980-07-24 | Citizen Watch Co Ltd | Ion plating equipment |
JPS596376A (ja) * | 1982-06-30 | 1984-01-13 | Anelva Corp | スパツタ装置 |
JPS5989768A (ja) * | 1982-11-12 | 1984-05-24 | Fujitsu Ltd | 薄膜の形成方法 |
JPS6321749B2 (ja) * | 1982-11-12 | 1988-05-09 | Fujitsu Ltd | |
JPS61238958A (ja) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | 複合薄膜形成法及び装置 |
JPH021230B2 (ja) * | 1985-04-15 | 1990-01-10 | Hitachi Ltd | |
JPS6350467A (ja) * | 1986-08-18 | 1988-03-03 | Fujitsu Ltd | スパツタリング装置 |
JPS63262458A (ja) * | 1987-04-20 | 1988-10-28 | Shinko Electric Co Ltd | 直流電源装置 |
JPS6431959A (en) * | 1987-07-27 | 1989-02-02 | Yokogawa Electric Corp | Formation of thin compound film |
JPH01108378A (ja) * | 1987-10-21 | 1989-04-25 | Mitsubishi Electric Corp | スパツタ装置 |
JPS6426366U (ja) * | 1988-04-28 | 1989-02-14 |
Also Published As
Publication number | Publication date |
---|---|
EP0005641A1 (en) | 1979-11-28 |
CA1119554A (en) | 1982-03-09 |
US4172020A (en) | 1979-10-23 |
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