JPS6431959A - Formation of thin compound film - Google Patents
Formation of thin compound filmInfo
- Publication number
- JPS6431959A JPS6431959A JP18726187A JP18726187A JPS6431959A JP S6431959 A JPS6431959 A JP S6431959A JP 18726187 A JP18726187 A JP 18726187A JP 18726187 A JP18726187 A JP 18726187A JP S6431959 A JPS6431959 A JP S6431959A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- sputtering
- compound film
- thin compound
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a thin compound film consisting of metallic target-composing materials and active gas-composing materials to the desired composition with good reproducibility, by monitoring sputtering speed at the time of carrying out sputtering by introducing active gas and inert gas into a vacuum vessel to exert glow discharge. CONSTITUTION:Ar gas is introduced from a mass flow controller 11 into a vacuum vessel 1 and, while holding a pressure at about 5X10<-6>, nitrogen gas is introduced from a mass controller 12, and then, a voltage is impressed on a metallic target 4 by means of a D.C. power source 14 to start sputtering. At this time, the consumption of active gas incorporated into a thin film under sputtering and consumed and sputtering speed detected by means of a spectrometry equipment 16 are monitored, and, according to the composition of the thin compound film to be formed, active-gas consumption and sputtering speed ratio are set up. By this method, the thin compound film of the desired composition having good reproducibility can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18726187A JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18726187A JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431959A true JPS6431959A (en) | 1989-02-02 |
Family
ID=16202881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18726187A Pending JPS6431959A (en) | 1987-07-27 | 1987-07-27 | Formation of thin compound film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431959A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5283435A (en) * | 1991-11-27 | 1994-02-01 | Leybold Aktiengesellschaft | Apparatus for determining the concentration of a gas in a vacuum chamber |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54153791A (en) * | 1978-05-24 | 1979-12-04 | Gould Inc | Method and apparatus for watching and controlling sputtering adhesion |
| JPS596376A (en) * | 1982-06-30 | 1984-01-13 | Anelva Corp | Sputtering apparatus |
| JPS61242631A (en) * | 1985-04-20 | 1986-10-28 | Nippon Soken Inc | Method and device for producing ultrafine particles of compound |
-
1987
- 1987-07-27 JP JP18726187A patent/JPS6431959A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54153791A (en) * | 1978-05-24 | 1979-12-04 | Gould Inc | Method and apparatus for watching and controlling sputtering adhesion |
| JPS596376A (en) * | 1982-06-30 | 1984-01-13 | Anelva Corp | Sputtering apparatus |
| JPS61242631A (en) * | 1985-04-20 | 1986-10-28 | Nippon Soken Inc | Method and device for producing ultrafine particles of compound |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5283435A (en) * | 1991-11-27 | 1994-02-01 | Leybold Aktiengesellschaft | Apparatus for determining the concentration of a gas in a vacuum chamber |
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