JPS54152862A - Semiconductor producing device - Google Patents

Semiconductor producing device

Info

Publication number
JPS54152862A
JPS54152862A JP6185478A JP6185478A JPS54152862A JP S54152862 A JPS54152862 A JP S54152862A JP 6185478 A JP6185478 A JP 6185478A JP 6185478 A JP6185478 A JP 6185478A JP S54152862 A JPS54152862 A JP S54152862A
Authority
JP
Japan
Prior art keywords
slider
solution
holes
stage
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6185478A
Other languages
Japanese (ja)
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6185478A priority Critical patent/JPS54152862A/en
Publication of JPS54152862A publication Critical patent/JPS54152862A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To reduce the fusing solution as well as the oxide product by providing the slider containing the solution tank possessing the small holes at the bottom part onto the semiconductor wafer storing fixed boat constituting the liquid-phase epitaxial growing device via the slider holding the small holes.
CONSTITUTION: The 1st slider 18 containing pierced holes h1Wh4 is put on fixed boat 17 holding cavity 21 to store semiconductor substrate 22, and then 2nd slider 20 holding pierced holes H1WH4 in the same number as those of slider 18 and formed into the solution tanks by opening the bottom part is placed on slider 18 via fixed stage 19. In such constitution, the solution of the prescribed composition is put into holes H1WH4, and the pressure is applied via weights W1WW4 to match previouslyy the pisitions between holes H1WH4 and h1Wh4 each. After this, boat 17 and stage 19 are moved to position small hole 23 of stage 19 between hole H1 and h1, and then substrate 22 is wetted by the solution. This action is repeated to give a contact between the solution within last hole H4 and substrate 22.
COPYRIGHT: (C)1979,JPO&Japio
JP6185478A 1978-05-23 1978-05-23 Semiconductor producing device Pending JPS54152862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6185478A JPS54152862A (en) 1978-05-23 1978-05-23 Semiconductor producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6185478A JPS54152862A (en) 1978-05-23 1978-05-23 Semiconductor producing device

Publications (1)

Publication Number Publication Date
JPS54152862A true JPS54152862A (en) 1979-12-01

Family

ID=13183093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6185478A Pending JPS54152862A (en) 1978-05-23 1978-05-23 Semiconductor producing device

Country Status (1)

Country Link
JP (1) JPS54152862A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120600A (en) * 1981-12-31 1983-07-18 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Epitaxial growth method of 2-5 family compound semiconductor
US4393806A (en) * 1980-02-27 1983-07-19 U.S. Philips Corporation Boat for the epitaxial growth from the liquid phase
JPS6268229U (en) * 1985-10-18 1987-04-28

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393806A (en) * 1980-02-27 1983-07-19 U.S. Philips Corporation Boat for the epitaxial growth from the liquid phase
JPS58120600A (en) * 1981-12-31 1983-07-18 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Epitaxial growth method of 2-5 family compound semiconductor
JPH04960B2 (en) * 1981-12-31 1992-01-09 Ei Teii Ando Teii Tekunorojiizu Inc
JPS6268229U (en) * 1985-10-18 1987-04-28

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