JPS54152862A - Semiconductor producing device - Google Patents
Semiconductor producing deviceInfo
- Publication number
- JPS54152862A JPS54152862A JP6185478A JP6185478A JPS54152862A JP S54152862 A JPS54152862 A JP S54152862A JP 6185478 A JP6185478 A JP 6185478A JP 6185478 A JP6185478 A JP 6185478A JP S54152862 A JPS54152862 A JP S54152862A
- Authority
- JP
- Japan
- Prior art keywords
- slider
- solution
- holes
- stage
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To reduce the fusing solution as well as the oxide product by providing the slider containing the solution tank possessing the small holes at the bottom part onto the semiconductor wafer storing fixed boat constituting the liquid-phase epitaxial growing device via the slider holding the small holes.
CONSTITUTION: The 1st slider 18 containing pierced holes h1Wh4 is put on fixed boat 17 holding cavity 21 to store semiconductor substrate 22, and then 2nd slider 20 holding pierced holes H1WH4 in the same number as those of slider 18 and formed into the solution tanks by opening the bottom part is placed on slider 18 via fixed stage 19. In such constitution, the solution of the prescribed composition is put into holes H1WH4, and the pressure is applied via weights W1WW4 to match previouslyy the pisitions between holes H1WH4 and h1Wh4 each. After this, boat 17 and stage 19 are moved to position small hole 23 of stage 19 between hole H1 and h1, and then substrate 22 is wetted by the solution. This action is repeated to give a contact between the solution within last hole H4 and substrate 22.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6185478A JPS54152862A (en) | 1978-05-23 | 1978-05-23 | Semiconductor producing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6185478A JPS54152862A (en) | 1978-05-23 | 1978-05-23 | Semiconductor producing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152862A true JPS54152862A (en) | 1979-12-01 |
Family
ID=13183093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6185478A Pending JPS54152862A (en) | 1978-05-23 | 1978-05-23 | Semiconductor producing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152862A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58120600A (en) * | 1981-12-31 | 1983-07-18 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Epitaxial growth method of 2-5 family compound semiconductor |
US4393806A (en) * | 1980-02-27 | 1983-07-19 | U.S. Philips Corporation | Boat for the epitaxial growth from the liquid phase |
JPS6268229U (en) * | 1985-10-18 | 1987-04-28 |
-
1978
- 1978-05-23 JP JP6185478A patent/JPS54152862A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4393806A (en) * | 1980-02-27 | 1983-07-19 | U.S. Philips Corporation | Boat for the epitaxial growth from the liquid phase |
JPS58120600A (en) * | 1981-12-31 | 1983-07-18 | ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド | Epitaxial growth method of 2-5 family compound semiconductor |
JPH04960B2 (en) * | 1981-12-31 | 1992-01-09 | Ei Teii Ando Teii Tekunorojiizu Inc | |
JPS6268229U (en) * | 1985-10-18 | 1987-04-28 |
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