JPS5269265A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS5269265A
JPS5269265A JP14572175A JP14572175A JPS5269265A JP S5269265 A JPS5269265 A JP S5269265A JP 14572175 A JP14572175 A JP 14572175A JP 14572175 A JP14572175 A JP 14572175A JP S5269265 A JPS5269265 A JP S5269265A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
growth method
phase epitaxial
gaas wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14572175A
Other languages
Japanese (ja)
Other versions
JPS5744011B2 (en
Inventor
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14572175A priority Critical patent/JPS5269265A/en
Publication of JPS5269265A publication Critical patent/JPS5269265A/en
Publication of JPS5744011B2 publication Critical patent/JPS5744011B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To prevent mixing of Al and to control oscillation wave-length precisely by putting GaAs wafer on the substrate after only solution in a solution container is pasesd over GaAs wafer.
COPYRIGHT: (C)1977,JPO&Japio
JP14572175A 1975-12-05 1975-12-05 Liquid phase epitaxial growth method Granted JPS5269265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14572175A JPS5269265A (en) 1975-12-05 1975-12-05 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14572175A JPS5269265A (en) 1975-12-05 1975-12-05 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5269265A true JPS5269265A (en) 1977-06-08
JPS5744011B2 JPS5744011B2 (en) 1982-09-18

Family

ID=15391584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14572175A Granted JPS5269265A (en) 1975-12-05 1975-12-05 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5269265A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320290Y2 (en) * 1985-07-18 1991-05-01

Also Published As

Publication number Publication date
JPS5744011B2 (en) 1982-09-18

Similar Documents

Publication Publication Date Title
JPS549592A (en) Luminous semiconductor element
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS5269265A (en) Liquid phase epitaxial growth method
JPS544088A (en) Manufacture for semiconductor laser
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5211860A (en) Liquid phase epitaxial device
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS524782A (en) Liquid phase epitaxial growth method
JPS52103952A (en) Liquid phase epitaxial crowth method of semiconductor crystal
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS5247581A (en) Liquid phase epitxial growth method
JPS5228863A (en) Process for growing in liquid phase
JPS52151562A (en) Liquid phase growth of compound semiconductors
JPS51123781A (en) A liquid phase crystal growth apparatus
JPS51140561A (en) Liquid phase epitaxial growing method
JPS51141577A (en) Method and apparatus for epitaxial growth in the liquid phase
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS5224166A (en) Process for growth of 3-dimensional compound crystal
JPS5270759A (en) Liquid phase growth equipment
JPS5376657A (en) Liquid phase epitaxial growth method
JPS5228865A (en) Process for multilayer epitaxial growth in liquid phase
JPS52154347A (en) Low temperature single crystal thin film growth method