JPS54150983A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS54150983A
JPS54150983A JP6011978A JP6011978A JPS54150983A JP S54150983 A JPS54150983 A JP S54150983A JP 6011978 A JP6011978 A JP 6011978A JP 6011978 A JP6011978 A JP 6011978A JP S54150983 A JPS54150983 A JP S54150983A
Authority
JP
Japan
Prior art keywords
ccd
deltaphi
potential
constitution
dynamic range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6011978A
Other languages
Japanese (ja)
Other versions
JPS6130757B2 (en
Inventor
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6011978A priority Critical patent/JPS54150983A/en
Publication of JPS54150983A publication Critical patent/JPS54150983A/en
Publication of JPS6130757B2 publication Critical patent/JPS6130757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase the dynamic range to be transferred to the 2nd CCD through the narrow transfer region by decreasing or setting to zero the height of the potential barrier at the flow-out part of the CCD featuring a relative large channel width. CONSTITUTION:To deepen the potential at the part of transfer region 20, the phosphorus ion is injected to P-type substrate 21 and the single-layer depression is secured under electrode 10. In this constitution, the increment of potential difference DELTAphi occurring at the center of channel width W and caused by the extension of the high potential given from channel stop 11 can be prevented even though W is decreased at charge flow-out part 14, thus improving greatly the dynamic range of the CCD. Furthermore, the noise caused by uneven DELTAphi can be eliminated by securing DELTAphi=O.
JP6011978A 1978-05-19 1978-05-19 Charge transfer device Granted JPS54150983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6011978A JPS54150983A (en) 1978-05-19 1978-05-19 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6011978A JPS54150983A (en) 1978-05-19 1978-05-19 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS54150983A true JPS54150983A (en) 1979-11-27
JPS6130757B2 JPS6130757B2 (en) 1986-07-15

Family

ID=13132907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6011978A Granted JPS54150983A (en) 1978-05-19 1978-05-19 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS54150983A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102397179B1 (en) 2018-12-21 2022-05-11 삼성에스디아이 주식회사 Hardmask composition, hardmask layer and method of forming patterns

Also Published As

Publication number Publication date
JPS6130757B2 (en) 1986-07-15

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