JPS54148482A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54148482A
JPS54148482A JP5779778A JP5779778A JPS54148482A JP S54148482 A JPS54148482 A JP S54148482A JP 5779778 A JP5779778 A JP 5779778A JP 5779778 A JP5779778 A JP 5779778A JP S54148482 A JPS54148482 A JP S54148482A
Authority
JP
Japan
Prior art keywords
film
coated
torr
hardening
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5779778A
Other languages
Japanese (ja)
Other versions
JPS6130733B2 (en
Inventor
Masaru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5779778A priority Critical patent/JPS54148482A/en
Publication of JPS54148482A publication Critical patent/JPS54148482A/en
Publication of JPS6130733B2 publication Critical patent/JPS6130733B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a surface protective film which excels in both the hardening and electric insulating performance by hardening the photosensitive resin film through the heat treatment of 20 minutes to one hour at 100W300°C and under the pressure reduction of 1 Torr or less.
CONSTITUTION: Insulator film 2 is coated on Si substrate 1 with the opening drilled at the fixed region, and element region 3 is formed by diffusion to be coated with ohmic contact layer 4. Then Al film 5 is deposited and then insulated and isolated with Al2O3 film 6 and via the anode oxidation to be used as the 1st-layer wiring. Then SiO2 intermediate insulator film 7 is coated on the wiring, and Ti-Pt film 9, plated Au film 10 and vamp terminal 11 are provided through through-hole part 8 to obtain the 2nd-layer wiring. After this, photo resist film 13' is applied to the areas except for terminal 11, and the substrate is put into vacuum device to undergo the high-vacuum exhaustion with 10-6W10-7 Torr. Then the heat treatment of 30W 60 minutes is given at 200W300°C through infrared heater to obtain hardened regist film 13. In this way, a protective film is obtained with better characteristics than the polyimide film.
COPYRIGHT: (C)1979,JPO&Japio
JP5779778A 1978-05-15 1978-05-15 Semiconductor device Granted JPS54148482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5779778A JPS54148482A (en) 1978-05-15 1978-05-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5779778A JPS54148482A (en) 1978-05-15 1978-05-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54148482A true JPS54148482A (en) 1979-11-20
JPS6130733B2 JPS6130733B2 (en) 1986-07-15

Family

ID=13065879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5779778A Granted JPS54148482A (en) 1978-05-15 1978-05-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54148482A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154646A (en) * 1985-12-26 1987-07-09 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154646A (en) * 1985-12-26 1987-07-09 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0740587B2 (en) * 1985-12-26 1995-05-01 松下電子工業株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6130733B2 (en) 1986-07-15

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