JPS54148482A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54148482A JPS54148482A JP5779778A JP5779778A JPS54148482A JP S54148482 A JPS54148482 A JP S54148482A JP 5779778 A JP5779778 A JP 5779778A JP 5779778 A JP5779778 A JP 5779778A JP S54148482 A JPS54148482 A JP S54148482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- coated
- torr
- hardening
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a surface protective film which excels in both the hardening and electric insulating performance by hardening the photosensitive resin film through the heat treatment of 20 minutes to one hour at 100W300°C and under the pressure reduction of 1 Torr or less.
CONSTITUTION: Insulator film 2 is coated on Si substrate 1 with the opening drilled at the fixed region, and element region 3 is formed by diffusion to be coated with ohmic contact layer 4. Then Al film 5 is deposited and then insulated and isolated with Al2O3 film 6 and via the anode oxidation to be used as the 1st-layer wiring. Then SiO2 intermediate insulator film 7 is coated on the wiring, and Ti-Pt film 9, plated Au film 10 and vamp terminal 11 are provided through through-hole part 8 to obtain the 2nd-layer wiring. After this, photo resist film 13' is applied to the areas except for terminal 11, and the substrate is put into vacuum device to undergo the high-vacuum exhaustion with 10-6W10-7 Torr. Then the heat treatment of 30W 60 minutes is given at 200W300°C through infrared heater to obtain hardened regist film 13. In this way, a protective film is obtained with better characteristics than the polyimide film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5779778A JPS54148482A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5779778A JPS54148482A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54148482A true JPS54148482A (en) | 1979-11-20 |
JPS6130733B2 JPS6130733B2 (en) | 1986-07-15 |
Family
ID=13065879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5779778A Granted JPS54148482A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54148482A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154646A (en) * | 1985-12-26 | 1987-07-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1978
- 1978-05-15 JP JP5779778A patent/JPS54148482A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154646A (en) * | 1985-12-26 | 1987-07-09 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0740587B2 (en) * | 1985-12-26 | 1995-05-01 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6130733B2 (en) | 1986-07-15 |
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