JPS54146979A - Semiconductor switching element - Google Patents
Semiconductor switching elementInfo
- Publication number
- JPS54146979A JPS54146979A JP5447578A JP5447578A JPS54146979A JP S54146979 A JPS54146979 A JP S54146979A JP 5447578 A JP5447578 A JP 5447578A JP 5447578 A JP5447578 A JP 5447578A JP S54146979 A JPS54146979 A JP S54146979A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gate
- cathode
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5447578A JPS60956B2 (ja) | 1978-05-10 | 1978-05-10 | 半導体スイツチング素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5447578A JPS60956B2 (ja) | 1978-05-10 | 1978-05-10 | 半導体スイツチング素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54146979A true JPS54146979A (en) | 1979-11-16 |
JPS60956B2 JPS60956B2 (ja) | 1985-01-11 |
Family
ID=12971687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5447578A Expired JPS60956B2 (ja) | 1978-05-10 | 1978-05-10 | 半導体スイツチング素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60956B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0230278A2 (de) * | 1986-01-24 | 1987-07-29 | Siemens Aktiengesellschaft | Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung |
JPH0592522U (ja) * | 1991-06-10 | 1993-12-17 | 有限会社イオン精工 | 袋ナット |
-
1978
- 1978-05-10 JP JP5447578A patent/JPS60956B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0230278A2 (de) * | 1986-01-24 | 1987-07-29 | Siemens Aktiengesellschaft | Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung |
JPH0592522U (ja) * | 1991-06-10 | 1993-12-17 | 有限会社イオン精工 | 袋ナット |
Also Published As
Publication number | Publication date |
---|---|
JPS60956B2 (ja) | 1985-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5539619A (en) | Thyristor | |
JPS5522840A (en) | Semiconductor switching element and manufacturing method thereof | |
JPH0147024B2 (ja) | ||
JPS5595370A (en) | Compound semiconductor field-effect transistor | |
JPS5587483A (en) | Mis type semiconductor device | |
JPS54146979A (en) | Semiconductor switching element | |
JP3249891B2 (ja) | 半導体装置およびその使用方法 | |
JPS62122272A (ja) | 半導体装置 | |
JPS55117281A (en) | 3[5 group compound semiconductor hetero structure mosfet | |
JPS54113273A (en) | Field effect-type switching element | |
JPS5587481A (en) | Mis type semiconductor device | |
JPS57176781A (en) | Superconductive device | |
JPS54121074A (en) | Semiconductor switching element | |
JPS6112072A (ja) | 半導体装置 | |
JPS575359A (en) | Semiconductor device | |
JPH01251755A (ja) | サイリスタ | |
JPS562667A (en) | Semiconductor device and manufacture thereof | |
JPS5539636A (en) | Composite semiconductor | |
JPS568873A (en) | Bipolar transistor | |
IE792474L (en) | Switching device | |
JPS56158480A (en) | Field effect transistor | |
JPS5673468A (en) | Mos type semiconductor device | |
JPS62144357A (ja) | スイツチング用半導体装置 | |
JPS55133553A (en) | Semiconductor integrated device | |
JPS57192083A (en) | Semiconductor device |