JPS54140480A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54140480A JPS54140480A JP4775878A JP4775878A JPS54140480A JP S54140480 A JPS54140480 A JP S54140480A JP 4775878 A JP4775878 A JP 4775878A JP 4775878 A JP4775878 A JP 4775878A JP S54140480 A JPS54140480 A JP S54140480A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- film
- layer
- region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4775878A JPS54140480A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4775878A JPS54140480A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54140480A true JPS54140480A (en) | 1979-10-31 |
Family
ID=12784254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4775878A Pending JPS54140480A (en) | 1978-04-24 | 1978-04-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54140480A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509067A (en) * | 1981-06-23 | 1985-04-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit devices with protective means against overvoltages |
US4720737A (en) * | 1983-06-30 | 1988-01-19 | Fujitsu Limited | Semiconductor device having a protection circuit with lateral bipolar transistor |
US4893159A (en) * | 1985-09-25 | 1990-01-09 | Kabushiki Kaisha Toshiba | Protected MOS transistor circuit |
-
1978
- 1978-04-24 JP JP4775878A patent/JPS54140480A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509067A (en) * | 1981-06-23 | 1985-04-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit devices with protective means against overvoltages |
US4720737A (en) * | 1983-06-30 | 1988-01-19 | Fujitsu Limited | Semiconductor device having a protection circuit with lateral bipolar transistor |
US4893159A (en) * | 1985-09-25 | 1990-01-09 | Kabushiki Kaisha Toshiba | Protected MOS transistor circuit |
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