JPS5413278A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5413278A JPS5413278A JP7776977A JP7776977A JPS5413278A JP S5413278 A JPS5413278 A JP S5413278A JP 7776977 A JP7776977 A JP 7776977A JP 7776977 A JP7776977 A JP 7776977A JP S5413278 A JPS5413278 A JP S5413278A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- manufacture
- semiconductor device
- resin
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To establish air separation transistor of high dielectric strength, by forming the V-shape groove for transistor separation on the semiconductor substrate on which a transistor is formed with anisotropical etching solution, and by removing only resin after filling the groove with resin and coating wiring.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7776977A JPS5413278A (en) | 1977-07-01 | 1977-07-01 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7776977A JPS5413278A (en) | 1977-07-01 | 1977-07-01 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5413278A true JPS5413278A (en) | 1979-01-31 |
Family
ID=13643143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7776977A Pending JPS5413278A (en) | 1977-07-01 | 1977-07-01 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5413278A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4685199A (en) * | 1986-04-29 | 1987-08-11 | Rca Corporation | Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer |
-
1977
- 1977-07-01 JP JP7776977A patent/JPS5413278A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4685199A (en) * | 1986-04-29 | 1987-08-11 | Rca Corporation | Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer |
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