JPS54125143A - Treating device using hydrogen fluoride-containing gas - Google Patents
Treating device using hydrogen fluoride-containing gasInfo
- Publication number
- JPS54125143A JPS54125143A JP3286478A JP3286478A JPS54125143A JP S54125143 A JPS54125143 A JP S54125143A JP 3286478 A JP3286478 A JP 3286478A JP 3286478 A JP3286478 A JP 3286478A JP S54125143 A JPS54125143 A JP S54125143A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cooled
- container
- hydrogen fluoride
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3286478A JPS54125143A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3286478A JPS54125143A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54125143A true JPS54125143A (en) | 1979-09-28 |
JPS558592B2 JPS558592B2 (ja) | 1980-03-05 |
Family
ID=12370709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3286478A Granted JPS54125143A (en) | 1978-03-24 | 1978-03-24 | Treating device using hydrogen fluoride-containing gas |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54125143A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6067673A (ja) * | 1983-09-22 | 1985-04-18 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
JPH03107479A (ja) * | 1989-09-22 | 1991-05-07 | Nec Corp | ドライエッチング装置 |
JPH07169756A (ja) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
JPH08306675A (ja) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
CN103981522A (zh) * | 2014-04-17 | 2014-08-13 | 宁波鱼化龙机电科技有限公司 | 一种陶瓷插芯钢线蚀刻机 |
KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57100558U (ja) * | 1980-12-12 | 1982-06-21 |
-
1978
- 1978-03-24 JP JP3286478A patent/JPS54125143A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6067673A (ja) * | 1983-09-22 | 1985-04-18 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
JPH0344148B2 (ja) * | 1983-09-22 | 1991-07-05 | Handotai Energy Kenkyusho | |
JPH03107479A (ja) * | 1989-09-22 | 1991-05-07 | Nec Corp | ドライエッチング装置 |
JPH07169756A (ja) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
JPH08306675A (ja) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | プラズマエッチング方法 |
CN103981522A (zh) * | 2014-04-17 | 2014-08-13 | 宁波鱼化龙机电科技有限公司 | 一种陶瓷插芯钢线蚀刻机 |
KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS558592B2 (ja) | 1980-03-05 |
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