JPS54117691A - Production of insulating gate-type semiconductor device - Google Patents

Production of insulating gate-type semiconductor device

Info

Publication number
JPS54117691A
JPS54117691A JP2556478A JP2556478A JPS54117691A JP S54117691 A JPS54117691 A JP S54117691A JP 2556478 A JP2556478 A JP 2556478A JP 2556478 A JP2556478 A JP 2556478A JP S54117691 A JPS54117691 A JP S54117691A
Authority
JP
Japan
Prior art keywords
film
type
region
concave
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2556478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6126234B2 (enrdf_load_stackoverflow
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2556478A priority Critical patent/JPS54117691A/ja
Publication of JPS54117691A publication Critical patent/JPS54117691A/ja
Publication of JPS6126234B2 publication Critical patent/JPS6126234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP2556478A 1978-03-06 1978-03-06 Production of insulating gate-type semiconductor device Granted JPS54117691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2556478A JPS54117691A (en) 1978-03-06 1978-03-06 Production of insulating gate-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2556478A JPS54117691A (en) 1978-03-06 1978-03-06 Production of insulating gate-type semiconductor device

Publications (2)

Publication Number Publication Date
JPS54117691A true JPS54117691A (en) 1979-09-12
JPS6126234B2 JPS6126234B2 (enrdf_load_stackoverflow) 1986-06-19

Family

ID=12169418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2556478A Granted JPS54117691A (en) 1978-03-06 1978-03-06 Production of insulating gate-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54117691A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133869A (en) * 1980-03-24 1981-10-20 Oki Electric Ind Co Ltd Mos type semiconductor device and manufacture thereof
JPS5931067A (ja) * 1982-08-14 1984-02-18 Matsushita Electric Works Ltd 縦型トランジスタの製法
US5049512A (en) * 1987-09-28 1991-09-17 Nissan Motor Co., Ltd. Method of forming a MOS field-effect transistor
US6528847B2 (en) * 1998-06-29 2003-03-04 Advanced Micro Devices, Inc. Metal oxide semiconductor device having contoured channel region and elevated source and drain regions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133869A (en) * 1980-03-24 1981-10-20 Oki Electric Ind Co Ltd Mos type semiconductor device and manufacture thereof
JPS5931067A (ja) * 1982-08-14 1984-02-18 Matsushita Electric Works Ltd 縦型トランジスタの製法
US5049512A (en) * 1987-09-28 1991-09-17 Nissan Motor Co., Ltd. Method of forming a MOS field-effect transistor
US6528847B2 (en) * 1998-06-29 2003-03-04 Advanced Micro Devices, Inc. Metal oxide semiconductor device having contoured channel region and elevated source and drain regions

Also Published As

Publication number Publication date
JPS6126234B2 (enrdf_load_stackoverflow) 1986-06-19

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