JPS54115646A - Gas etching method - Google Patents

Gas etching method

Info

Publication number
JPS54115646A
JPS54115646A JP2227678A JP2227678A JPS54115646A JP S54115646 A JPS54115646 A JP S54115646A JP 2227678 A JP2227678 A JP 2227678A JP 2227678 A JP2227678 A JP 2227678A JP S54115646 A JPS54115646 A JP S54115646A
Authority
JP
Japan
Prior art keywords
microwaves
producing
gas
etching
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2227678A
Other languages
Japanese (ja)
Inventor
Akiyuki Furuya
Shinichi Yamamoto
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2227678A priority Critical patent/JPS54115646A/en
Publication of JPS54115646A publication Critical patent/JPS54115646A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To attain a predetermined etching speed without generation of heat and deterioration of photoresist due to an increase in vol. of oxygen by varying the electric power of a power source for producing high-frequency waves or microwaves to easily control etching speed. CONSTITUTION:Microwaves emitted from power source 2 for producing microwaves are regulated in microwave producing means 1 and introduced into applicaror 7. Etching gas producing chamber 9 is set through applicator 7, and water- cooling unit 12 is placed round chamber 9. A mixed gas of CF4 and oxygen supplied from a gas inlet is excited by the microwaves, forming an etching gas. This etching gas is introduced into reaction chamber 11 from dispersion pipes 14 to each material 16 to be etched. At this time, by varying the electric power of source 2 with Slidac 3, the etching speed is easily controlled without changing the vol. of oxygen.
JP2227678A 1978-02-28 1978-02-28 Gas etching method Pending JPS54115646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2227678A JPS54115646A (en) 1978-02-28 1978-02-28 Gas etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2227678A JPS54115646A (en) 1978-02-28 1978-02-28 Gas etching method

Publications (1)

Publication Number Publication Date
JPS54115646A true JPS54115646A (en) 1979-09-08

Family

ID=12078226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2227678A Pending JPS54115646A (en) 1978-02-28 1978-02-28 Gas etching method

Country Status (1)

Country Link
JP (1) JPS54115646A (en)

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