JPS6481225A - Plasma treating device - Google Patents

Plasma treating device

Info

Publication number
JPS6481225A
JPS6481225A JP62237178A JP23717887A JPS6481225A JP S6481225 A JPS6481225 A JP S6481225A JP 62237178 A JP62237178 A JP 62237178A JP 23717887 A JP23717887 A JP 23717887A JP S6481225 A JPS6481225 A JP S6481225A
Authority
JP
Japan
Prior art keywords
workpiece
plasma
magnetic field
reaction chamber
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62237178A
Other languages
Japanese (ja)
Other versions
JP2656503B2 (en
Inventor
Masaharu Saikai
Makoto Marumoto
Ryoji Hamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62237178A priority Critical patent/JP2656503B2/en
Publication of JPS6481225A publication Critical patent/JPS6481225A/en
Application granted granted Critical
Publication of JP2656503B2 publication Critical patent/JP2656503B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To plasma-treat a workpiece to be treated with microwave energy kept at high efficiency by periodically changing a magnetic field formed perpendicularly to an electric field of the microwave. CONSTITUTION:The title device includes a reaction chamber 2 for plasma- treating a workpiece 1 to be treated, a magnetron 3 for radiating microwave energy and directing it into the reaction chamber 2, a waveguide 4 for guiding the microwave, an electromagnet 5 provided on the outer periphery of the waveguide 4 surrounding the reaction chamber 2, a gas supplyer 6 for supplying reaction gas into the reaction chamber 2 and a vacuum pump 7 for evacuating a reaction product a vacuum. The workpiece 1 is placed on a base 8 and the electromagnets 5a, 5b are supplied with power from a power supply 9 so as to change the magnetic field periodically. Hereby, the intensity of the magnetic field is changed with respect to the workpiece 1 to change the gradient of the magnetic field. It is therefore assured that a region, which generates thrust force and plasma density effectively under the conditions where the microwave energy is effectively changed to a plasma can be allowed to approach the workpiece, thereby assuring a high speed plasma treatment of the workpiece.
JP62237178A 1987-09-24 1987-09-24 Microwave plasma processing method Expired - Fee Related JP2656503B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62237178A JP2656503B2 (en) 1987-09-24 1987-09-24 Microwave plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62237178A JP2656503B2 (en) 1987-09-24 1987-09-24 Microwave plasma processing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5058406A Division JP2781712B2 (en) 1993-03-18 1993-03-18 Plasma processing method

Publications (2)

Publication Number Publication Date
JPS6481225A true JPS6481225A (en) 1989-03-27
JP2656503B2 JP2656503B2 (en) 1997-09-24

Family

ID=17011530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62237178A Expired - Fee Related JP2656503B2 (en) 1987-09-24 1987-09-24 Microwave plasma processing method

Country Status (1)

Country Link
JP (1) JP2656503B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117131A (en) * 1989-06-30 1992-05-26 Kabushiki Kaisha Toshiba Buffer circuit having a voltage drop means for the purpose of reducing peak current and through-current
JPH04298033A (en) * 1991-03-27 1992-10-21 Hitachi Ltd Dry etching method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109232A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Method for microwave plasma treatment
JPS60134423A (en) * 1983-12-23 1985-07-17 Hitachi Ltd Microwave plasma etching device
JPS60154620A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Treatment of microwave plasma
JPS6481213A (en) * 1987-09-22 1989-03-27 Sumitomo Metal Ind Plasma process apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109232A (en) * 1983-11-18 1985-06-14 Hitachi Ltd Method for microwave plasma treatment
JPS60134423A (en) * 1983-12-23 1985-07-17 Hitachi Ltd Microwave plasma etching device
JPS60154620A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Treatment of microwave plasma
JPS6481213A (en) * 1987-09-22 1989-03-27 Sumitomo Metal Ind Plasma process apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117131A (en) * 1989-06-30 1992-05-26 Kabushiki Kaisha Toshiba Buffer circuit having a voltage drop means for the purpose of reducing peak current and through-current
JPH04298033A (en) * 1991-03-27 1992-10-21 Hitachi Ltd Dry etching method

Also Published As

Publication number Publication date
JP2656503B2 (en) 1997-09-24

Similar Documents

Publication Publication Date Title
EP0270667B1 (en) Dual plasma microwave apparatus and method for treating a surface
KR880009541A (en) Plasma treatment apparatus and method
ATE353472T1 (en) PLASMA TREATMENT APPARATUS AND METHOD
JPS6436769A (en) Plasma treatment device
EP0382065A3 (en) Apparatus for plasma processing
ZA802187B (en) Treatment of matter in low temperature plasmas
KR940022720A (en) Plasma processing equipment
TW367556B (en) Plasma processing device ad plasma processing method
KR920003431A (en) Apparatus and processing apparatus for forming a vacuum atmosphere
KR890003266A (en) Plasma treatment method and apparatus
KR980700675A (en) Method and Apparatus for Plasma Processing
EP0402867A3 (en) Apparatus for microwave processing in a magnetic field
EP0247397A3 (en) Apparatus for the surface treatment of work pieces
JPS64272A (en) Microwave plasma cvd device
JPS6481225A (en) Plasma treating device
JP2781712B2 (en) Plasma processing method
KR100492068B1 (en) Inductive plasma chamber for generating wide volume plasma
TW350981B (en) Method and system for plasma-processing
RU2711067C1 (en) Method of ion nitriding in crossed electric and magnetic fields
JPH05106051A (en) Plasma treating apparatus
JPS6414921A (en) Microwave plasma processor
FR2395663A1 (en) Microwave heat treatment of articles, e.g. of refractory material - with avoidance of plasma formation near article being treated, increasing speed of treatment and possibly higher temps.
JPS56166377A (en) Plasma treating method of hollow body
JPS6436021A (en) Microwave plasma processor
KR100354967B1 (en) Large area and high density plasma generating apparatus

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees