JPS6481225A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPS6481225A JPS6481225A JP62237178A JP23717887A JPS6481225A JP S6481225 A JPS6481225 A JP S6481225A JP 62237178 A JP62237178 A JP 62237178A JP 23717887 A JP23717887 A JP 23717887A JP S6481225 A JPS6481225 A JP S6481225A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- plasma
- magnetic field
- reaction chamber
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To plasma-treat a workpiece to be treated with microwave energy kept at high efficiency by periodically changing a magnetic field formed perpendicularly to an electric field of the microwave. CONSTITUTION:The title device includes a reaction chamber 2 for plasma- treating a workpiece 1 to be treated, a magnetron 3 for radiating microwave energy and directing it into the reaction chamber 2, a waveguide 4 for guiding the microwave, an electromagnet 5 provided on the outer periphery of the waveguide 4 surrounding the reaction chamber 2, a gas supplyer 6 for supplying reaction gas into the reaction chamber 2 and a vacuum pump 7 for evacuating a reaction product a vacuum. The workpiece 1 is placed on a base 8 and the electromagnets 5a, 5b are supplied with power from a power supply 9 so as to change the magnetic field periodically. Hereby, the intensity of the magnetic field is changed with respect to the workpiece 1 to change the gradient of the magnetic field. It is therefore assured that a region, which generates thrust force and plasma density effectively under the conditions where the microwave energy is effectively changed to a plasma can be allowed to approach the workpiece, thereby assuring a high speed plasma treatment of the workpiece.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237178A JP2656503B2 (en) | 1987-09-24 | 1987-09-24 | Microwave plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237178A JP2656503B2 (en) | 1987-09-24 | 1987-09-24 | Microwave plasma processing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5058406A Division JP2781712B2 (en) | 1993-03-18 | 1993-03-18 | Plasma processing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6481225A true JPS6481225A (en) | 1989-03-27 |
JP2656503B2 JP2656503B2 (en) | 1997-09-24 |
Family
ID=17011530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62237178A Expired - Fee Related JP2656503B2 (en) | 1987-09-24 | 1987-09-24 | Microwave plasma processing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2656503B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5117131A (en) * | 1989-06-30 | 1992-05-26 | Kabushiki Kaisha Toshiba | Buffer circuit having a voltage drop means for the purpose of reducing peak current and through-current |
JPH04298033A (en) * | 1991-03-27 | 1992-10-21 | Hitachi Ltd | Dry etching method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60109232A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Method for microwave plasma treatment |
JPS60134423A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Microwave plasma etching device |
JPS60154620A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Treatment of microwave plasma |
JPS6481213A (en) * | 1987-09-22 | 1989-03-27 | Sumitomo Metal Ind | Plasma process apparatus |
-
1987
- 1987-09-24 JP JP62237178A patent/JP2656503B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60109232A (en) * | 1983-11-18 | 1985-06-14 | Hitachi Ltd | Method for microwave plasma treatment |
JPS60134423A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Microwave plasma etching device |
JPS60154620A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Treatment of microwave plasma |
JPS6481213A (en) * | 1987-09-22 | 1989-03-27 | Sumitomo Metal Ind | Plasma process apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5117131A (en) * | 1989-06-30 | 1992-05-26 | Kabushiki Kaisha Toshiba | Buffer circuit having a voltage drop means for the purpose of reducing peak current and through-current |
JPH04298033A (en) * | 1991-03-27 | 1992-10-21 | Hitachi Ltd | Dry etching method |
Also Published As
Publication number | Publication date |
---|---|
JP2656503B2 (en) | 1997-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |