JPS54108573A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54108573A
JPS54108573A JP1534778A JP1534778A JPS54108573A JP S54108573 A JPS54108573 A JP S54108573A JP 1534778 A JP1534778 A JP 1534778A JP 1534778 A JP1534778 A JP 1534778A JP S54108573 A JPS54108573 A JP S54108573A
Authority
JP
Japan
Prior art keywords
film
substrate
reverse surface
sin
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1534778A
Other languages
Japanese (ja)
Inventor
Hatsuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1534778A priority Critical patent/JPS54108573A/en
Publication of JPS54108573A publication Critical patent/JPS54108573A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To protect the reverse surface of a substrate during the formation of an element on the substrate surface, by using SiN with blocking effect strong against contamination.
CONSTITUTION: On P-type substrate 1, N epitaxial layer 2 is stacked and covered with SiO23. Next, SiN4 is made from SiH4 and NH3 at a temperature of approximate 800°C and then applied. The chemical equivalent of SiN is not so complete as that of Si3N4. Film 4 has blocking effect against contaminant Na+ at a thickness of over 500Å. Then, SiO25 is applied and the reverse surface is covered with a resist film; and film 5 on the surface is removed, an opening is made selectively in film 3, and a diffusion layer is formed. In this way, it can be prevented until the final process easily and definitely that the reverse surface of the substrate is contaminated by Na+ ions, etc.
COPYRIGHT: (C)1979,JPO&Japio
JP1534778A 1978-02-15 1978-02-15 Manufacture of semiconductor device Pending JPS54108573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1534778A JPS54108573A (en) 1978-02-15 1978-02-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1534778A JPS54108573A (en) 1978-02-15 1978-02-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54108573A true JPS54108573A (en) 1979-08-25

Family

ID=11886254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1534778A Pending JPS54108573A (en) 1978-02-15 1978-02-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54108573A (en)

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