JPS54107268A - Integrated circuit unit and its production - Google Patents

Integrated circuit unit and its production

Info

Publication number
JPS54107268A
JPS54107268A JP1355178A JP1355178A JPS54107268A JP S54107268 A JPS54107268 A JP S54107268A JP 1355178 A JP1355178 A JP 1355178A JP 1355178 A JP1355178 A JP 1355178A JP S54107268 A JPS54107268 A JP S54107268A
Authority
JP
Japan
Prior art keywords
channel stopper
production
integrated circuit
circuit unit
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1355178A
Other languages
Japanese (ja)
Inventor
Yasushi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1355178A priority Critical patent/JPS54107268A/en
Publication of JPS54107268A publication Critical patent/JPS54107268A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To remove a bridge part to improve the integration rate of a transistor by preventing a leakage current.
CONSTITUTION: Source region 13, drain region 14 and insulating film 16 are formed on p-type semiconductor substance 12, and active region a is masked with a resistor, and field channel stopper layer 15 is formed by ion injection. Next, active region a is etched to form the second insulating film, and after that, when gate-off channel stopper 19 which overlaps field channel stopper 15 including gate electrodes 8' and 8'' is formed, this stopper 19 is formed in self-alignment for gate electrode 18 to prevent completely the leakage current.
COPYRIGHT: (C)1979,JPO&Japio
JP1355178A 1978-02-10 1978-02-10 Integrated circuit unit and its production Pending JPS54107268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1355178A JPS54107268A (en) 1978-02-10 1978-02-10 Integrated circuit unit and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1355178A JPS54107268A (en) 1978-02-10 1978-02-10 Integrated circuit unit and its production

Publications (1)

Publication Number Publication Date
JPS54107268A true JPS54107268A (en) 1979-08-22

Family

ID=11836293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1355178A Pending JPS54107268A (en) 1978-02-10 1978-02-10 Integrated circuit unit and its production

Country Status (1)

Country Link
JP (1) JPS54107268A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991783A (en) * 1973-01-09 1974-09-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991783A (en) * 1973-01-09 1974-09-02

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