JPS54100261A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54100261A
JPS54100261A JP699878A JP699878A JPS54100261A JP S54100261 A JPS54100261 A JP S54100261A JP 699878 A JP699878 A JP 699878A JP 699878 A JP699878 A JP 699878A JP S54100261 A JPS54100261 A JP S54100261A
Authority
JP
Japan
Prior art keywords
solution
soaked
junction
eliminate
several
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP699878A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP699878A priority Critical patent/JPS54100261A/en
Publication of JPS54100261A publication Critical patent/JPS54100261A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Led Devices (AREA)
  • Weting (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: To avoid the lowering of the output and to increase the reliability by giving etching of several mμ to the fractionated and exposed pn junction to eliminate the damage at the periphery.
CONSTITUTION: The GaAs pellet is soaked about 10 seconds into the solution of 25°C temperature obtained by dissolving Br of about 5% into CH3OH, and then soaked about two minuted into the solution of H2SO4:H2O:H2O2 = 1:10;1 at 20°C. After this, about 20-second etching is given via the solution of HF:ZHN3:H2O = 1:3:2 at 30°C. As a result, the exposed surface of the pn junction is etched away about several mμ to eliminate the damaged part caused at the pellet formation time, thus obtaining a highly reliable semiconductor device. With this method, the III-V group compound semiconductor and the mixed crystal compound semiconductor devices can secure the high reliability.
COPYRIGHT: (C)1979,JPO&Japio
JP699878A 1978-01-24 1978-01-24 Semiconductor device Pending JPS54100261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP699878A JPS54100261A (en) 1978-01-24 1978-01-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP699878A JPS54100261A (en) 1978-01-24 1978-01-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54100261A true JPS54100261A (en) 1979-08-07

Family

ID=11653773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP699878A Pending JPS54100261A (en) 1978-01-24 1978-01-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54100261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05124699A (en) * 1992-04-30 1993-05-21 Tokico Ltd Constant volume shipping device
CN108485668A (en) * 2018-04-08 2018-09-04 宜特(上海)检测技术有限公司 Knot staining solution and its knot colouring method for gallium arsenide semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05124699A (en) * 1992-04-30 1993-05-21 Tokico Ltd Constant volume shipping device
CN108485668A (en) * 2018-04-08 2018-09-04 宜特(上海)检测技术有限公司 Knot staining solution and its knot colouring method for gallium arsenide semiconductor
CN108485668B (en) * 2018-04-08 2021-01-22 苏试宜特(上海)检测技术有限公司 Junction dyeing solution for gallium arsenide semiconductor and junction dyeing method thereof

Similar Documents

Publication Publication Date Title
JPS5244173A (en) Method of flat etching of silicon substrate
JPS52116185A (en) Mesa-type semiconductor laser
JPS54100261A (en) Semiconductor device
JPS551110A (en) Exposure to electron beam
JPS5343480A (en) Etching method of gallium nitride
JPS5343481A (en) Mirror surface etching method of sapphire substrate crystal
JPS5356980A (en) Production of semiconductor device
JPS5339872A (en) Etching method of wafers
JPS5382174A (en) Surface processing method for semiconductor device
JPS5572055A (en) Preparation of semiconductor device
JPS51114875A (en) Semiconductor device manufacturing method
JPS5339873A (en) Etching method of silicon semiconductor substrate containing gold
JPS5376760A (en) Semiconductor rectifying device
JPS6450560A (en) Manufacture of semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS52141178A (en) Production of semiconductor device
JPS51112179A (en) Processing method of the semiconductor
JPS5436185A (en) Etching method of gaas system compound semiconductor crystal
JPS5793544A (en) Manufacture of compound semiconductor device
JPS52127188A (en) Semiconductor device
JPS5526686A (en) Manufacturing semiconductor device
JPS5352352A (en) Production of semiconductor device having pn junction
JPS5242377A (en) Method of etching gaalas
JPS5258492A (en) Semiconductor light emitting device
JPS5376743A (en) Cutting method of semiconductor substrate