JPS5395581A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5395581A
JPS5395581A JP968277A JP968277A JPS5395581A JP S5395581 A JPS5395581 A JP S5395581A JP 968277 A JP968277 A JP 968277A JP 968277 A JP968277 A JP 968277A JP S5395581 A JPS5395581 A JP S5395581A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
exposing
junction
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP968277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135715B2 (enExample
Inventor
Tomoyuki Tanaka
Toshikatsu Shirasawa
Masahiro Okamura
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP968277A priority Critical patent/JPS5395581A/ja
Priority to US05/873,774 priority patent/US4210464A/en
Priority to DE2804147A priority patent/DE2804147C2/de
Publication of JPS5395581A publication Critical patent/JPS5395581A/ja
Publication of JPS6135715B2 publication Critical patent/JPS6135715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP968277A 1977-02-02 1977-02-02 Manufacture for semiconductor device Granted JPS5395581A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP968277A JPS5395581A (en) 1977-02-02 1977-02-02 Manufacture for semiconductor device
US05/873,774 US4210464A (en) 1977-02-02 1978-01-31 Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers
DE2804147A DE2804147C2 (de) 1977-02-02 1978-01-31 Verfahren zur Herstellung von Halbleiter-Bauelementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP968277A JPS5395581A (en) 1977-02-02 1977-02-02 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5395581A true JPS5395581A (en) 1978-08-21
JPS6135715B2 JPS6135715B2 (enExample) 1986-08-14

Family

ID=11726967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP968277A Granted JPS5395581A (en) 1977-02-02 1977-02-02 Manufacture for semiconductor device

Country Status (3)

Country Link
US (1) US4210464A (enExample)
JP (1) JPS5395581A (enExample)
DE (1) DE2804147C2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137099A (en) * 1977-07-11 1979-01-30 General Electric Company Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
JPS6068621A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
JPH0379212U (enExample) * 1989-11-30 1991-08-13
US5650336A (en) * 1994-09-19 1997-07-22 Matsushita Electric Industrial Co., Ltd. Method of presuming life time of semiconductor device
DE19640311B4 (de) * 1996-09-30 2005-12-29 Eupec Gmbh & Co. Kg Halbleiterbauelement mit Lateralwiderstand und Verfahren zu dessen Herstellung
KR100332456B1 (ko) * 1999-10-20 2002-04-13 윤종용 퓨즈를 갖는 반도체 소자 및 그 제조방법
US6261874B1 (en) * 2000-06-14 2001-07-17 International Rectifier Corp. Fast recovery diode and method for its manufacture
US6674064B1 (en) 2001-07-18 2004-01-06 University Of Central Florida Method and system for performance improvement of photodetectors and solar cells
US6898138B2 (en) * 2002-08-29 2005-05-24 Micron Technology, Inc. Method of reducing variable retention characteristics in DRAM cells
DE102004017723B4 (de) * 2003-04-10 2011-12-08 Fuji Electric Co., Ltd In Rückwärtsrichtung sperrendes Halbleiterbauteil und Verfahren zu seiner Herstellung
KR100809701B1 (ko) * 2006-09-05 2008-03-06 삼성전자주식회사 칩간 열전달 차단 스페이서를 포함하는 멀티칩 패키지

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1114556A (en) * 1965-11-26 1968-05-22 Corning Glass Works Ceramic article and method of making it
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
FR96444E (fr) * 1967-11-08 1972-06-30 Gachot Jean Systeme de freinage a air comprime pour véhicules automobiles.
US3551171A (en) * 1967-12-21 1970-12-29 Gen Electric Bao-pbo-sio2 semiconductor encapsulation glass
DE2035703C3 (de) * 1970-07-18 1974-07-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht
JPS5213716B2 (enExample) * 1971-12-22 1977-04-16
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
US4076555A (en) * 1976-05-17 1978-02-28 Westinghouse Electric Corporation Irradiation for rapid turn-off reverse blocking diode thyristor
JPS535971A (en) * 1976-07-06 1978-01-19 Mitsubishi Electric Corp Semiconductor device
JPS5819125B2 (ja) * 1976-08-11 1983-04-16 株式会社日立製作所 半導体装置の製造方法

Also Published As

Publication number Publication date
DE2804147A1 (de) 1978-08-17
JPS6135715B2 (enExample) 1986-08-14
US4210464A (en) 1980-07-01
DE2804147C2 (de) 1987-01-29

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