JPS5390779A - Semiconductor and method of producing same - Google Patents

Semiconductor and method of producing same

Info

Publication number
JPS5390779A
JPS5390779A JP324278A JP324278A JPS5390779A JP S5390779 A JPS5390779 A JP S5390779A JP 324278 A JP324278 A JP 324278A JP 324278 A JP324278 A JP 324278A JP S5390779 A JPS5390779 A JP S5390779A
Authority
JP
Japan
Prior art keywords
semiconductor
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP324278A
Other languages
English (en)
Japanese (ja)
Inventor
Yan Purinshipe Fureder Kuraude
Maria Haato Koonerisu
Erizabesu Jiyozefu U Henrikasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5390779A publication Critical patent/JPS5390779A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H10P76/40—
    • H10W20/432—
    • H10W20/4451—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP324278A 1977-01-17 1978-01-14 Semiconductor and method of producing same Pending JPS5390779A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7700420A NL7700420A (nl) 1977-01-17 1977-01-17 Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.

Publications (1)

Publication Number Publication Date
JPS5390779A true JPS5390779A (en) 1978-08-09

Family

ID=19827780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP324278A Pending JPS5390779A (en) 1977-01-17 1978-01-14 Semiconductor and method of producing same

Country Status (6)

Country Link
US (1) US4183037A (enExample)
JP (1) JPS5390779A (enExample)
CA (1) CA1094692A (enExample)
DE (1) DE2800363C2 (enExample)
FR (1) FR2377705A1 (enExample)
NL (1) NL7700420A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
JPS55138868A (en) * 1979-04-17 1980-10-30 Toshiba Corp Bipolar integrated circuit and method of fabricating the same
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
JPS56115560A (en) * 1980-02-18 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS5852870A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd 半導体集積回路装置
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
DE102004015654A1 (de) * 2003-04-02 2004-10-21 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Endstufe zum Ansteuern einer elektrischen Maschine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606912A (enExample) * 1966-05-19 1967-11-20
NL7107040A (enExample) * 1971-05-22 1972-11-24
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
IT1061530B (it) * 1975-06-12 1983-04-30 Ncr Co Metodo per la formazione di connessioni elettriche in regioni selezionate di una superficie di un dispositivo semiconduttore a circuito integrato
US4109275A (en) * 1976-12-22 1978-08-22 International Business Machines Corporation Interconnection of integrated circuit metallization

Also Published As

Publication number Publication date
DE2800363C2 (de) 1985-02-21
FR2377705A1 (fr) 1978-08-11
CA1094692A (en) 1981-01-27
US4183037A (en) 1980-01-08
FR2377705B1 (enExample) 1983-04-29
DE2800363A1 (de) 1978-07-20
NL7700420A (nl) 1978-07-19

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