FR2377705B1 - - Google Patents

Info

Publication number
FR2377705B1
FR2377705B1 FR7801216A FR7801216A FR2377705B1 FR 2377705 B1 FR2377705 B1 FR 2377705B1 FR 7801216 A FR7801216 A FR 7801216A FR 7801216 A FR7801216 A FR 7801216A FR 2377705 B1 FR2377705 B1 FR 2377705B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7801216A
Other languages
French (fr)
Other versions
FR2377705A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2377705A1 publication Critical patent/FR2377705A1/fr
Application granted granted Critical
Publication of FR2377705B1 publication Critical patent/FR2377705B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • H10P76/40
    • H10W20/432
    • H10W20/4451

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7801216A 1977-01-17 1978-01-17 Dispositif semi-conducteur, et procede pour sa fabrication Granted FR2377705A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7700420A NL7700420A (nl) 1977-01-17 1977-01-17 Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.

Publications (2)

Publication Number Publication Date
FR2377705A1 FR2377705A1 (fr) 1978-08-11
FR2377705B1 true FR2377705B1 (enExample) 1983-04-29

Family

ID=19827780

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7801216A Granted FR2377705A1 (fr) 1977-01-17 1978-01-17 Dispositif semi-conducteur, et procede pour sa fabrication

Country Status (6)

Country Link
US (1) US4183037A (enExample)
JP (1) JPS5390779A (enExample)
CA (1) CA1094692A (enExample)
DE (1) DE2800363C2 (enExample)
FR (1) FR2377705A1 (enExample)
NL (1) NL7700420A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
JPS55138868A (en) * 1979-04-17 1980-10-30 Toshiba Corp Bipolar integrated circuit and method of fabricating the same
US4244001A (en) * 1979-09-28 1981-01-06 Rca Corporation Fabrication of an integrated injection logic device with narrow basewidth
JPS56115560A (en) * 1980-02-18 1981-09-10 Toshiba Corp Manufacture of semiconductor device
JPS5852870A (ja) * 1981-09-25 1983-03-29 Hitachi Ltd 半導体集積回路装置
JPS58127363A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体集積回路装置
JPS594050A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
DE102004015654A1 (de) * 2003-04-02 2004-10-21 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Endstufe zum Ansteuern einer elektrischen Maschine

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6606912A (enExample) * 1966-05-19 1967-11-20
NL7107040A (enExample) * 1971-05-22 1972-11-24
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
IT1061530B (it) * 1975-06-12 1983-04-30 Ncr Co Metodo per la formazione di connessioni elettriche in regioni selezionate di una superficie di un dispositivo semiconduttore a circuito integrato
US4109275A (en) * 1976-12-22 1978-08-22 International Business Machines Corporation Interconnection of integrated circuit metallization

Also Published As

Publication number Publication date
DE2800363C2 (de) 1985-02-21
FR2377705A1 (fr) 1978-08-11
CA1094692A (en) 1981-01-27
US4183037A (en) 1980-01-08
JPS5390779A (en) 1978-08-09
DE2800363A1 (de) 1978-07-20
NL7700420A (nl) 1978-07-19

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Legal Events

Date Code Title Description
ST Notification of lapse