JPS5389378A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5389378A
JPS5389378A JP11928077A JP11928077A JPS5389378A JP S5389378 A JPS5389378 A JP S5389378A JP 11928077 A JP11928077 A JP 11928077A JP 11928077 A JP11928077 A JP 11928077A JP S5389378 A JPS5389378 A JP S5389378A
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor device
current path
regions
path portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11928077A
Other languages
Japanese (ja)
Other versions
JPS5744027B2 (en
Inventor
Junichi Nishizawa
Yasunori Mochida
Terumoto Nonaka
Takashi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP11928077A priority Critical patent/JPS5389378A/en
Publication of JPS5389378A publication Critical patent/JPS5389378A/en
Publication of JPS5744027B2 publication Critical patent/JPS5744027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain a 3-terminal type semiconductor device capable of performing high speed switching operations by disposing opposite conductivity type regions sandwiching the specified current path portions of one conductivity type semiconductor regions and constantly cutting off the current path portions with the depletion layer extending from the opposite conductivity type regions.
JP11928077A 1977-10-04 1977-10-04 Semiconductor device Granted JPS5389378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11928077A JPS5389378A (en) 1977-10-04 1977-10-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11928077A JPS5389378A (en) 1977-10-04 1977-10-04 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51079578A Division JPS608628B2 (en) 1976-07-05 1976-07-05 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5389378A true JPS5389378A (en) 1978-08-05
JPS5744027B2 JPS5744027B2 (en) 1982-09-18

Family

ID=14757464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11928077A Granted JPS5389378A (en) 1977-10-04 1977-10-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5389378A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04164365A (en) * 1990-10-29 1992-06-10 Matsushita Electron Corp Gate circuit and gate device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit
JPS52128082A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit
JPS52128082A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04164365A (en) * 1990-10-29 1992-06-10 Matsushita Electron Corp Gate circuit and gate device

Also Published As

Publication number Publication date
JPS5744027B2 (en) 1982-09-18

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