JPS5386586A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5386586A
JPS5386586A JP115777A JP115777A JPS5386586A JP S5386586 A JPS5386586 A JP S5386586A JP 115777 A JP115777 A JP 115777A JP 115777 A JP115777 A JP 115777A JP S5386586 A JPS5386586 A JP S5386586A
Authority
JP
Japan
Prior art keywords
electrodes
production
semiconductor device
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP115777A
Other languages
Japanese (ja)
Inventor
Shigeru Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP115777A priority Critical patent/JPS5386586A/en
Publication of JPS5386586A publication Critical patent/JPS5386586A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To produce the device with high accuracy and good reproducibility of the capacity values between transfer electrodes and substrate by forming first electrodes in self-slignment, forming second electrodes through etching of the substrate and making the second electrodes by way of insulation films in the etched portions.
JP115777A 1977-01-11 1977-01-11 Production of semiconductor device Pending JPS5386586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP115777A JPS5386586A (en) 1977-01-11 1977-01-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP115777A JPS5386586A (en) 1977-01-11 1977-01-11 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5386586A true JPS5386586A (en) 1978-07-31

Family

ID=11493592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP115777A Pending JPS5386586A (en) 1977-01-11 1977-01-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5386586A (en)

Similar Documents

Publication Publication Date Title
JPS5386586A (en) Production of semiconductor device
JPS5283070A (en) Production of semiconductor device
JPS5333053A (en) Production of semiconductor device
JPS53128285A (en) Semiconductor device and production of the same
JPS538076A (en) Production of mis semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS53126270A (en) Production of semiconductor devices
JPS53147482A (en) Production of semiconductor device
JPS531471A (en) Manufacture for semiconductor device
JPS52154367A (en) Production of semiconductor device
JPS52129279A (en) Production of semiconductor device
JPS5368165A (en) Production of semiconductor device
JPS53135582A (en) Semiconductor device and its manufacture
JPS5360584A (en) Production of semiconductor device
JPS53148395A (en) Semiconductor memory device
JPS5272186A (en) Production of mis type semiconductor device
JPS5362471A (en) Semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS5376666A (en) Production of semiconductor device
JPS5376752A (en) Production of semionductor device
JPS5350670A (en) Production of semiconductor device
JPS52104072A (en) High voltage semiconductor device
JPS51112266A (en) Semiconductor device production method
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface