JPS5386177A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5386177A JPS5386177A JP92077A JP92077A JPS5386177A JP S5386177 A JPS5386177 A JP S5386177A JP 92077 A JP92077 A JP 92077A JP 92077 A JP92077 A JP 92077A JP S5386177 A JPS5386177 A JP S5386177A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- film
- oxide film
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP92077A JPS5386177A (en) | 1977-01-07 | 1977-01-07 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP92077A JPS5386177A (en) | 1977-01-07 | 1977-01-07 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5386177A true JPS5386177A (en) | 1978-07-29 |
Family
ID=11487112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP92077A Pending JPS5386177A (en) | 1977-01-07 | 1977-01-07 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5386177A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102252A (en) * | 1979-01-29 | 1980-08-05 | Nec Corp | Manufacture of semiconductor device |
JPS5621370A (en) * | 1979-07-31 | 1981-02-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos transistor |
JPS5710230A (en) * | 1980-06-20 | 1982-01-19 | Fujitsu Ltd | Manufacture of integrated circuit |
-
1977
- 1977-01-07 JP JP92077A patent/JPS5386177A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55102252A (en) * | 1979-01-29 | 1980-08-05 | Nec Corp | Manufacture of semiconductor device |
JPS6252459B2 (ja) * | 1979-01-29 | 1987-11-05 | Nippon Electric Co | |
JPS5621370A (en) * | 1979-07-31 | 1981-02-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos transistor |
JPH0243339B2 (ja) * | 1979-07-31 | 1990-09-28 | ||
JPS5710230A (en) * | 1980-06-20 | 1982-01-19 | Fujitsu Ltd | Manufacture of integrated circuit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5380966A (en) | Manufacture of electrode fdr semiconductor device | |
JPS51135383A (en) | Semiconductor variable capacitance device | |
JPS5386177A (en) | Production of semiconductor device | |
JPS53128285A (en) | Semiconductor device and production of the same | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS5368165A (en) | Production of semiconductor device | |
JPS5348458A (en) | Production of semiconductor device | |
JPS5390763A (en) | Semiconductor element and mask for producing semiconductor element | |
JPS53117983A (en) | Production of semiconductor device | |
JPS5251872A (en) | Production of semiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS53114366A (en) | Semiconductor device | |
JPS5222483A (en) | Method of manufacturing semiconductor device | |
JPS547879A (en) | Manufacture for semiconductor device | |
JPS5372461A (en) | Etching method in manufacture of semiconductor device | |
JPS5367387A (en) | Production of semiconductor device | |
JPS53132260A (en) | Production of semiconductor device | |
JPS53135267A (en) | Production of semiconductor device | |
JPS5356981A (en) | Production of semiconductor device | |
JPS5263673A (en) | Production of semiconductor device | |
JPS53136958A (en) | Selective impurity diffusion method into semiconductor substrate | |
JPS52101978A (en) | Preparation of semiconductor device on insulating substrate | |
JPS5396761A (en) | Production of semiconductor device |