JPS5384571A - Insulating gate type field effect transistor and its manufacture - Google Patents

Insulating gate type field effect transistor and its manufacture

Info

Publication number
JPS5384571A
JPS5384571A JP16028676A JP16028676A JPS5384571A JP S5384571 A JPS5384571 A JP S5384571A JP 16028676 A JP16028676 A JP 16028676A JP 16028676 A JP16028676 A JP 16028676A JP S5384571 A JPS5384571 A JP S5384571A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16028676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS576706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16028676A priority Critical patent/JPS5384571A/ja
Publication of JPS5384571A publication Critical patent/JPS5384571A/ja
Publication of JPS576706B2 publication Critical patent/JPS576706B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)
JP16028676A 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture Granted JPS5384571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16028676A JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16028676A JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Publications (2)

Publication Number Publication Date
JPS5384571A true JPS5384571A (en) 1978-07-26
JPS576706B2 JPS576706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-02-06

Family

ID=15711692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16028676A Granted JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5384571A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615078A (en) * 1979-07-17 1981-02-13 Fujitsu Ltd Manufacture of semiconductor device
JPS58165381A (ja) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト 高耐電圧ｍｏｓトランジスタ
US4656492A (en) * 1981-08-24 1987-04-07 Hitachi, Ltd. Insulated gate field effect transistor
JPH01183852A (ja) * 1988-01-19 1989-07-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065179A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-09 1975-06-02
JPS5066181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-12 1975-06-04
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5065179A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-09 1975-06-02
JPS5066181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-12 1975-06-04
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615078A (en) * 1979-07-17 1981-02-13 Fujitsu Ltd Manufacture of semiconductor device
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region
US5552623A (en) * 1979-08-25 1996-09-03 Handotai Kenkyu Shinkokai Short channel mosfet with buried anti-punch through region
US4656492A (en) * 1981-08-24 1987-04-07 Hitachi, Ltd. Insulated gate field effect transistor
JPS58165381A (ja) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト 高耐電圧ｍｏｓトランジスタ
US4966859A (en) * 1982-03-09 1990-10-30 Siemens Aktiengesellschaft Voltage-stable sub-μm MOS transistor for VLSI circuits
JPH01183852A (ja) * 1988-01-19 1989-07-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS576706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-02-06

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