JPS576706B2 - - Google Patents

Info

Publication number
JPS576706B2
JPS576706B2 JP16028676A JP16028676A JPS576706B2 JP S576706 B2 JPS576706 B2 JP S576706B2 JP 16028676 A JP16028676 A JP 16028676A JP 16028676 A JP16028676 A JP 16028676A JP S576706 B2 JPS576706 B2 JP S576706B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16028676A
Other languages
Japanese (ja)
Other versions
JPS5384571A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16028676A priority Critical patent/JPS5384571A/ja
Publication of JPS5384571A publication Critical patent/JPS5384571A/ja
Publication of JPS576706B2 publication Critical patent/JPS576706B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)
JP16028676A 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture Granted JPS5384571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16028676A JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16028676A JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Publications (2)

Publication Number Publication Date
JPS5384571A JPS5384571A (en) 1978-07-26
JPS576706B2 true JPS576706B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-02-06

Family

ID=15711692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16028676A Granted JPS5384571A (en) 1976-12-29 1976-12-29 Insulating gate type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS5384571A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615078A (en) * 1979-07-17 1981-02-13 Fujitsu Ltd Manufacture of semiconductor device
DE3069973D1 (en) * 1979-08-25 1985-02-28 Zaidan Hojin Handotai Kenkyu Insulated-gate field-effect transistor
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
DE3208500A1 (de) * 1982-03-09 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
JPH0770715B2 (ja) * 1988-01-19 1995-07-31 松下電器産業株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818785B2 (ja) * 1973-10-09 1983-04-14 日本電気株式会社 シユウセキカイロソウチノ セイゾウホウホウ
JPS5066181A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-12 1975-06-04
JPS52107777A (en) * 1976-03-08 1977-09-09 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor unit

Also Published As

Publication number Publication date
JPS5384571A (en) 1978-07-26

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