JPS5383586A - Manufacture of semiconductor memory unit - Google Patents

Manufacture of semiconductor memory unit

Info

Publication number
JPS5383586A
JPS5383586A JP15814376A JP15814376A JPS5383586A JP S5383586 A JPS5383586 A JP S5383586A JP 15814376 A JP15814376 A JP 15814376A JP 15814376 A JP15814376 A JP 15814376A JP S5383586 A JPS5383586 A JP S5383586A
Authority
JP
Japan
Prior art keywords
memory unit
manufacture
semiconductor memory
capacitor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15814376A
Other languages
Japanese (ja)
Other versions
JPS5812741B2 (en
Inventor
Masahiko Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51158143A priority Critical patent/JPS5812741B2/en
Publication of JPS5383586A publication Critical patent/JPS5383586A/en
Publication of JPS5812741B2 publication Critical patent/JPS5812741B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To omit another power source for the gate voltage of the capacitor and to enhance the integrated performance of the memory unit consisting of MIS-type transistor and capacitor, by constituting the gate electrodes of the transistor and the capacitor with the common poly crystal Si film.
JP51158143A 1976-12-29 1976-12-29 Method of manufacturing semiconductor memory device Expired JPS5812741B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51158143A JPS5812741B2 (en) 1976-12-29 1976-12-29 Method of manufacturing semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51158143A JPS5812741B2 (en) 1976-12-29 1976-12-29 Method of manufacturing semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5383586A true JPS5383586A (en) 1978-07-24
JPS5812741B2 JPS5812741B2 (en) 1983-03-10

Family

ID=15665195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51158143A Expired JPS5812741B2 (en) 1976-12-29 1976-12-29 Method of manufacturing semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5812741B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021041U (en) * 1983-07-20 1985-02-13 トキコ株式会社 pillar

Also Published As

Publication number Publication date
JPS5812741B2 (en) 1983-03-10

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