JPS5383583A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5383583A
JPS5383583A JP16073276A JP16073276A JPS5383583A JP S5383583 A JPS5383583 A JP S5383583A JP 16073276 A JP16073276 A JP 16073276A JP 16073276 A JP16073276 A JP 16073276A JP S5383583 A JPS5383583 A JP S5383583A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
region
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16073276A
Other languages
Japanese (ja)
Other versions
JPS5826670B2 (en
Inventor
Hirohei Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51160732A priority Critical patent/JPS5826670B2/en
Publication of JPS5383583A publication Critical patent/JPS5383583A/en
Publication of JPS5826670B2 publication Critical patent/JPS5826670B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To facilitate an easy control for both the concentration and the length as well as to enhance the dielectric strength between the source and the drain, by forming a region to be the enhancement channel part later only near the surface of the semiconductor substrate with shallower depth the source region.
COPYRIGHT: (C)1978,JPO&Japio
JP51160732A 1976-12-28 1976-12-28 Manufacturing method of semiconductor device Expired JPS5826670B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51160732A JPS5826670B2 (en) 1976-12-28 1976-12-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51160732A JPS5826670B2 (en) 1976-12-28 1976-12-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5383583A true JPS5383583A (en) 1978-07-24
JPS5826670B2 JPS5826670B2 (en) 1983-06-04

Family

ID=15721252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51160732A Expired JPS5826670B2 (en) 1976-12-28 1976-12-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5826670B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100078A (en) * 1972-03-29 1973-12-18
JPS50123273A (en) * 1974-03-16 1975-09-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48100078A (en) * 1972-03-29 1973-12-18
JPS50123273A (en) * 1974-03-16 1975-09-27

Also Published As

Publication number Publication date
JPS5826670B2 (en) 1983-06-04

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