JPS5382162A - Beam epitaxial growth method - Google Patents

Beam epitaxial growth method

Info

Publication number
JPS5382162A
JPS5382162A JP15869376A JP15869376A JPS5382162A JP S5382162 A JPS5382162 A JP S5382162A JP 15869376 A JP15869376 A JP 15869376A JP 15869376 A JP15869376 A JP 15869376A JP S5382162 A JPS5382162 A JP S5382162A
Authority
JP
Japan
Prior art keywords
epitaxial growth
growth method
beam epitaxial
growing
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15869376A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishi
Seihei Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15869376A priority Critical patent/JPS5382162A/en
Publication of JPS5382162A publication Critical patent/JPS5382162A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To perform the selective growing of complicated patterns, by limiting the progressing domain of growing through the provision of the mask having open hole around the surface of substrate and by growing as required sequentially through the movement of mask.
JP15869376A 1976-12-27 1976-12-27 Beam epitaxial growth method Pending JPS5382162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15869376A JPS5382162A (en) 1976-12-27 1976-12-27 Beam epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15869376A JPS5382162A (en) 1976-12-27 1976-12-27 Beam epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS5382162A true JPS5382162A (en) 1978-07-20

Family

ID=15677283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15869376A Pending JPS5382162A (en) 1976-12-27 1976-12-27 Beam epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5382162A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577925A (en) * 1980-06-18 1982-01-16 Matsushita Electric Ind Co Ltd Manufacture of thin film integrated circuit
JPH02214184A (en) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577925A (en) * 1980-06-18 1982-01-16 Matsushita Electric Ind Co Ltd Manufacture of thin film integrated circuit
JPH02214184A (en) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp Manufacture of semiconductor device

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