JPH02214184A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor laser with improved characteristics and longer life by forming a stripe-shaped active layer by a stripe-shaped mask within an MBE growth device. CONSTITUTION:A substrate 1 is put into an MBE device, a lower-clad layer 2 is allowed to grow on the entire substrate 1, a mask 5 for growing active layer is carried to the substrate for close contact, MB for the active layer is introduced, and only those which have passed through the slit of the mask 5 are allowed to grow on the lower-clad layer 2. Then, a stripe-shaped active layer 3 is formed, the mask 5 is eliminated, and an upper-clad layer 4 is allowed to grow for forming a double hetero structure. Thus, a semiconductor which is superb in characteristics and has a longer life can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor laser.

[Conventional technology]

Figure 2 is a cross-sectional view of the double heterostructure of a conventional semiconductor laser.
11 is a substrate, (2) is a lower cladding layer, (3) is an active layer,
(4) is the upper craft layer.

Next, the manufacturing process will be explained.

The lower cladding layer (2) and the active layer (3) are grown on the substrate (1) by vapor phase epitaxy or the like (Fig. Ca), and the active layer (Fig.
3] Create a striped wet etching mask on top, and then wet-etch the active layer (3).
are left in a stripe pattern (Figure b). Next, this mask is removed, and then the upper cladding (4) is formed again by vapor phase growth.
(Figure 0). In this way, a double heterostructure, which is the basic structure of a semiconductor laser, is formed.

[Problem to be solved by the invention]

Conventional semiconductor laser manufacturing methods have the above-mentioned structure, which causes problems such as leakage current at the oscillation threshold of the semiconductor laser due to the regrowth interface on the top or side of the active body, and short life. There was a point.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a method for manufacturing a semiconductor laser with good characteristics and a long life.

[Means to solve the problem]

The method for manufacturing a semiconductor laser according to the present invention is to form a striped active n layer using a striped mask in an MBE growth apparatus, thereby obtaining a double heterostructure without creating a regrowth interface.

[Effect]

The striped mask in this invention cuts off the MB in stripes in the MBE growth layer, forming stripes of active shells.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

In Fig. 1(a) to (el), (1) is the substrate, (2)
is a lower cladding layer, (3) is an active layer, (4) is an upper cladding layer, and (to) is a mask for growing the active layer.

Next, the manufacturing method will be explained.

First, put the board (Fig.
1) Grow the lower cladding layer (2) over the entire surface (Figure b).

Next, the active layer growth mask (5) is transferred onto the substrate (1) and brought close to it (Figure 0). Thereafter, MB for the active layer is introduced, and only the MB that has passed through the slit of the mask (5) is grown on the lower cladding layer (2). In this way, a striped active layer (3) is formed (Figure d). Next, the mask is removed and an upper cladding layer (4) is grown (Figure e).

In this way, a double heterostructure is formed.

〔Effect of the invention〕

As described above, according to the present invention, since the active layer can be processed into stripes and grown all at once in an MBE growth apparatus without a regrowth interface, a semiconductor laser with good characteristics and a long life can be obtained. It has the effect of

[Brief explanation of the drawing]

FIG. 1 is a manufacturing process cross-sectional view showing a method for manufacturing a semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a manufacturing process cross-sectional view showing a conventional semiconductor laser manufacturing method. In the figure, (1) is the substrate, (2) is the lower cladding layer, (
3) shows an active layer, (4) shows an upper cladding layer, and (5) shows a mask for growing the active layer. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] In a semiconductor laser having a thin film rectangular active layer and cladding layers on top, bottom, left and right sides of the thin film rectangular active layer, the thin film rectangular active layer is formed by MBE growth using a mask having striped windows; A method for manufacturing a semiconductor laser characterized by continuous growth of a cladding layer, an active layer, and an upper cladding body.