JPS5374391A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5374391A
JPS5374391A JP15106576A JP15106576A JPS5374391A JP S5374391 A JPS5374391 A JP S5374391A JP 15106576 A JP15106576 A JP 15106576A JP 15106576 A JP15106576 A JP 15106576A JP S5374391 A JPS5374391 A JP S5374391A
Authority
JP
Japan
Prior art keywords
emitter
layer
emitter layer
semiconductor device
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15106576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129152B2 (enrdf_load_stackoverflow
Inventor
Hiromi Sakurai
Koichi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15106576A priority Critical patent/JPS5374391A/ja
Publication of JPS5374391A publication Critical patent/JPS5374391A/ja
Publication of JPS6129152B2 publication Critical patent/JPS6129152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15106576A 1976-12-15 1976-12-15 Semiconductor device Granted JPS5374391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15106576A JPS5374391A (en) 1976-12-15 1976-12-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15106576A JPS5374391A (en) 1976-12-15 1976-12-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5374391A true JPS5374391A (en) 1978-07-01
JPS6129152B2 JPS6129152B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=15510524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15106576A Granted JPS5374391A (en) 1976-12-15 1976-12-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5374391A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6129152B2 (enrdf_load_stackoverflow) 1986-07-04

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