JPS5374384A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5374384A
JPS5374384A JP15045476A JP15045476A JPS5374384A JP S5374384 A JPS5374384 A JP S5374384A JP 15045476 A JP15045476 A JP 15045476A JP 15045476 A JP15045476 A JP 15045476A JP S5374384 A JPS5374384 A JP S5374384A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
oxide film
exfoliating
contaminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15045476A
Other languages
Japanese (ja)
Inventor
Toshio Yonezawa
Hidekuni Ishida
Takashi Yasujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15045476A priority Critical patent/JPS5374384A/en
Publication of JPS5374384A publication Critical patent/JPS5374384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enhance the electrical property by exfoliating totally the insulator mask used for diffusion to form newly an oxide film which is not contaminated by alkali ion, etc. and further by forming a protective film on the oxide film.
JP15045476A 1976-12-15 1976-12-15 Semiconductor device and its manufacture Pending JPS5374384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15045476A JPS5374384A (en) 1976-12-15 1976-12-15 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15045476A JPS5374384A (en) 1976-12-15 1976-12-15 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5374384A true JPS5374384A (en) 1978-07-01

Family

ID=15497272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15045476A Pending JPS5374384A (en) 1976-12-15 1976-12-15 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5374384A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04215432A (en) * 1990-12-14 1992-08-06 Mitsubishi Electric Corp Microworking method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499192A (en) * 1972-05-11 1974-01-26
JPS5091272A (en) * 1973-12-12 1975-07-21
JPS5132536A (en) * 1974-09-14 1976-03-19 Mitsui Seiyaku Kogyo Kk P aminomechiruansokukosan no seizohoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499192A (en) * 1972-05-11 1974-01-26
JPS5091272A (en) * 1973-12-12 1975-07-21
JPS5132536A (en) * 1974-09-14 1976-03-19 Mitsui Seiyaku Kogyo Kk P aminomechiruansokukosan no seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04215432A (en) * 1990-12-14 1992-08-06 Mitsubishi Electric Corp Microworking method

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