JPS5390879A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5390879A
JPS5390879A JP620877A JP620877A JPS5390879A JP S5390879 A JPS5390879 A JP S5390879A JP 620877 A JP620877 A JP 620877A JP 620877 A JP620877 A JP 620877A JP S5390879 A JPS5390879 A JP S5390879A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
gate
source
teh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP620877A
Other languages
Japanese (ja)
Other versions
JPS6022510B2 (en
Inventor
Hiroyasu Karimoto
Kazutoshi Nagano
Kuni Ogawa
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP620877A priority Critical patent/JPS6022510B2/en
Publication of JPS5390879A publication Critical patent/JPS5390879A/en
Publication of JPS6022510B2 publication Critical patent/JPS6022510B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain J-FET featuring a high dielectric strength between teh gate and the source, by providing an oxide insulator of several millimicrons composed of the porous insulator film between the source and the gate.
COPYRIGHT: (C)1978,JPO&Japio
JP620877A 1977-01-21 1977-01-21 Manufacturing method of semiconductor device Expired JPS6022510B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP620877A JPS6022510B2 (en) 1977-01-21 1977-01-21 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP620877A JPS6022510B2 (en) 1977-01-21 1977-01-21 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5390879A true JPS5390879A (en) 1978-08-10
JPS6022510B2 JPS6022510B2 (en) 1985-06-03

Family

ID=11632105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP620877A Expired JPS6022510B2 (en) 1977-01-21 1977-01-21 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6022510B2 (en)

Also Published As

Publication number Publication date
JPS6022510B2 (en) 1985-06-03

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