JPS5372576A - Insulator gate type field effect transistor - Google Patents

Insulator gate type field effect transistor

Info

Publication number
JPS5372576A
JPS5372576A JP14778976A JP14778976A JPS5372576A JP S5372576 A JPS5372576 A JP S5372576A JP 14778976 A JP14778976 A JP 14778976A JP 14778976 A JP14778976 A JP 14778976A JP S5372576 A JPS5372576 A JP S5372576A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
dielectric strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14778976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5525514B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Isao Yoshida
Takeaki Okabe
Tatsu Toriyabe
Mineo Katsueda
Masatomo Furuumi
Yukio Shirota
Hideshi Ito
Shikayuki Ochi
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14778976A priority Critical patent/JPS5372576A/ja
Publication of JPS5372576A publication Critical patent/JPS5372576A/ja
Publication of JPS5525514B2 publication Critical patent/JPS5525514B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP14778976A 1976-12-10 1976-12-10 Insulator gate type field effect transistor Granted JPS5372576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14778976A JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14778976A JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58216187A Division JPS59130472A (ja) 1983-11-18 1983-11-18 絶縁ゲ−ト形電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5372576A true JPS5372576A (en) 1978-06-28
JPS5525514B2 JPS5525514B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-07-07

Family

ID=15438227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14778976A Granted JPS5372576A (en) 1976-12-10 1976-12-10 Insulator gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5372576A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106165A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Insulating gate type field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106165A (en) * 1980-12-24 1982-07-01 Hitachi Ltd Insulating gate type field-effect transistor

Also Published As

Publication number Publication date
JPS5525514B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-07-07

Similar Documents

Publication Publication Date Title
JPS535581A (en) Schottky gate type field effect transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS53138281A (en) Insulated-gate field effect transistor
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS5382179A (en) Field effect transistor
JPS5372576A (en) Insulator gate type field effect transistor
JPS5322379A (en) Junction type field eff ect transistor
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS5366179A (en) Semiconductor device
JPS5372577A (en) High dielectric strength field effect transistor
JPS5286086A (en) Field effect transistor
JPS5368174A (en) Lateral transistor
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS52135273A (en) Mos type semiconductor device
JPS5364480A (en) Field effect semiconductor device
JPS538080A (en) Insulated gate type field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS52105782A (en) Semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS5411687A (en) Manufacture for semiconductor integrated circuit
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS52127078A (en) Semiconductor device
JPS5342683A (en) Vertical field effect transistor
JPS52144980A (en) Sos semiconductor device