JPS5336471A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5336471A JPS5336471A JP11080876A JP11080876A JPS5336471A JP S5336471 A JPS5336471 A JP S5336471A JP 11080876 A JP11080876 A JP 11080876A JP 11080876 A JP11080876 A JP 11080876A JP S5336471 A JPS5336471 A JP S5336471A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- erosion
- performance
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11080876A JPS5336471A (en) | 1976-09-17 | 1976-09-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11080876A JPS5336471A (en) | 1976-09-17 | 1976-09-17 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5336471A true JPS5336471A (en) | 1978-04-04 |
JPS5435069B2 JPS5435069B2 (ja) | 1979-10-31 |
Family
ID=14545172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11080876A Granted JPS5336471A (en) | 1976-09-17 | 1976-09-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5336471A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPS5818938A (ja) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 集積回路構造体 |
JPS5827342A (ja) * | 1981-07-27 | 1983-02-18 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 誘電体分離領域形成方法 |
-
1976
- 1976-09-17 JP JP11080876A patent/JPS5336471A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55125627A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Formation of electrode for semiconductor device |
JPS5818938A (ja) * | 1981-07-27 | 1983-02-03 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 集積回路構造体 |
JPS5827342A (ja) * | 1981-07-27 | 1983-02-18 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 誘電体分離領域形成方法 |
JPH046093B2 (ja) * | 1981-07-27 | 1992-02-04 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPH0429228B2 (ja) * | 1981-07-27 | 1992-05-18 |
Also Published As
Publication number | Publication date |
---|---|
JPS5435069B2 (ja) | 1979-10-31 |
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