JPS5324277A - Semiconductor devic e and its production - Google Patents

Semiconductor devic e and its production

Info

Publication number
JPS5324277A
JPS5324277A JP9907676A JP9907676A JPS5324277A JP S5324277 A JPS5324277 A JP S5324277A JP 9907676 A JP9907676 A JP 9907676A JP 9907676 A JP9907676 A JP 9907676A JP S5324277 A JPS5324277 A JP S5324277A
Authority
JP
Japan
Prior art keywords
production
devic
semiconductor
semiconductor devic
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9907676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641941B2 (cs
Inventor
Reiji Takashina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9907676A priority Critical patent/JPS5324277A/ja
Publication of JPS5324277A publication Critical patent/JPS5324277A/ja
Publication of JPS641941B2 publication Critical patent/JPS641941B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP9907676A 1976-08-18 1976-08-18 Semiconductor devic e and its production Granted JPS5324277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Publications (2)

Publication Number Publication Date
JPS5324277A true JPS5324277A (en) 1978-03-06
JPS641941B2 JPS641941B2 (cs) 1989-01-13

Family

ID=14237817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9907676A Granted JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Country Status (1)

Country Link
JP (1) JPS5324277A (cs)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155771A (en) * 1978-05-29 1979-12-08 Nec Corp Pattern forming method
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS56106622U (cs) * 1980-01-16 1981-08-19
JPS56110983U (cs) * 1980-01-24 1981-08-27
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5832434A (ja) * 1981-08-20 1983-02-25 Toshiba Corp 半導体装置の製造方法
JPS6297332A (ja) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Ｍｏｓトランジスタの製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155771A (en) * 1978-05-29 1979-12-08 Nec Corp Pattern forming method
JPS5563844A (en) * 1978-11-03 1980-05-14 Ibm Method of forming insulator between conductive layers
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS56106622U (cs) * 1980-01-16 1981-08-19
JPS56110983U (cs) * 1980-01-24 1981-08-27
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5832434A (ja) * 1981-08-20 1983-02-25 Toshiba Corp 半導体装置の製造方法
JPS6297332A (ja) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Ｍｏｓトランジスタの製造方法

Also Published As

Publication number Publication date
JPS641941B2 (cs) 1989-01-13

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