JPS53130972A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53130972A JPS53130972A JP4618077A JP4618077A JPS53130972A JP S53130972 A JPS53130972 A JP S53130972A JP 4618077 A JP4618077 A JP 4618077A JP 4618077 A JP4618077 A JP 4618077A JP S53130972 A JPS53130972 A JP S53130972A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- recrystallizing
- reliability
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To manufacture a device having excellent electrical performance and reliability, by recrystallizing non-crystal Si film 0.1 to 5μm thick formed by CVD method after heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4618077A JPS53130972A (en) | 1977-04-20 | 1977-04-20 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4618077A JPS53130972A (en) | 1977-04-20 | 1977-04-20 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53130972A true JPS53130972A (en) | 1978-11-15 |
Family
ID=12739825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4618077A Pending JPS53130972A (en) | 1977-04-20 | 1977-04-20 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53130972A (en) |
-
1977
- 1977-04-20 JP JP4618077A patent/JPS53130972A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5395571A (en) | Semiconductor device | |
JPS53130972A (en) | Manufacture for semiconductor device | |
JPS5230167A (en) | Method for production of semiconductor device | |
JPS52128063A (en) | Manufacture of semiconductor device | |
JPS543473A (en) | Manufacture of semiconductor device | |
JPS53142877A (en) | Manufacture for compound semiconductor device | |
JPS5411688A (en) | Manufacture for semiconductor device | |
JPS5419624A (en) | Adhering method of adhesive tape | |
JPS5320775A (en) | Production of semiconductor device | |
JPS52111379A (en) | Semi-conductor device | |
JPS5335383A (en) | Semiconductor device | |
JPS5421289A (en) | Manufacture for semiconductor device | |
JPS53126275A (en) | Semiconductor device | |
JPS53130979A (en) | Manufacture for semiconductor device | |
JPS52143186A (en) | Taping device | |
JPS5335375A (en) | Heating method | |
JPS5416980A (en) | Semiconductor device | |
JPS5440580A (en) | Wiring contact structure of semiconductor device | |
JPS5421171A (en) | Manufacture for compound semiconductor device | |
JPS548457A (en) | Impurity introducing method to poly-crystal silicon | |
JPS5373979A (en) | Transistor device | |
JPS5374360A (en) | Heat treatment method for compound semiconductor | |
JPS5397771A (en) | Semiconductor device | |
JPS547879A (en) | Manufacture for semiconductor device | |
JPS5211782A (en) | Method of manufacturing semiconductor device |