JPS53123087A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53123087A
JPS53123087A JP3787777A JP3787777A JPS53123087A JP S53123087 A JPS53123087 A JP S53123087A JP 3787777 A JP3787777 A JP 3787777A JP 3787777 A JP3787777 A JP 3787777A JP S53123087 A JPS53123087 A JP S53123087A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming
fet
impurity
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3787777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6131634B2 (enrdf_load_stackoverflow
Inventor
Takeshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3787777A priority Critical patent/JPS53123087A/ja
Publication of JPS53123087A publication Critical patent/JPS53123087A/ja
Publication of JPS6131634B2 publication Critical patent/JPS6131634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3787777A 1977-04-01 1977-04-01 Semiconductor device Granted JPS53123087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3787777A JPS53123087A (en) 1977-04-01 1977-04-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3787777A JPS53123087A (en) 1977-04-01 1977-04-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53123087A true JPS53123087A (en) 1978-10-27
JPS6131634B2 JPS6131634B2 (enrdf_load_stackoverflow) 1986-07-21

Family

ID=12509752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3787777A Granted JPS53123087A (en) 1977-04-01 1977-04-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53123087A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6131634B2 (enrdf_load_stackoverflow) 1986-07-21

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