JPS53123084A - Short channel mosfet and production of the same - Google Patents
Short channel mosfet and production of the sameInfo
- Publication number
- JPS53123084A JPS53123084A JP3699777A JP3699777A JPS53123084A JP S53123084 A JPS53123084 A JP S53123084A JP 3699777 A JP3699777 A JP 3699777A JP 3699777 A JP3699777 A JP 3699777A JP S53123084 A JPS53123084 A JP S53123084A
- Authority
- JP
- Japan
- Prior art keywords
- channel mosfet
- short channel
- production
- same
- shaloow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a short channel MOSFET of a high operating speed by diffusing As through the use of an As ion blocking film having serration s and forming source and drain regions having diffused layers which are deep in the region where wiring metals are to be mounted and are shaloow in the regions adjoining thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3699777A JPS53123084A (en) | 1977-04-01 | 1977-04-01 | Short channel mosfet and production of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3699777A JPS53123084A (en) | 1977-04-01 | 1977-04-01 | Short channel mosfet and production of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53123084A true JPS53123084A (en) | 1978-10-27 |
Family
ID=12485363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3699777A Pending JPS53123084A (en) | 1977-04-01 | 1977-04-01 | Short channel mosfet and production of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53123084A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02353A (en) * | 1989-02-13 | 1990-01-05 | Seiko Epson Corp | Cmos type semiconductor device |
US5055420A (en) * | 1984-11-22 | 1991-10-08 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit devices |
JPH05308129A (en) * | 1991-12-26 | 1993-11-19 | Seiko Epson Corp | Insulated gate type field effect transistor |
-
1977
- 1977-04-01 JP JP3699777A patent/JPS53123084A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055420A (en) * | 1984-11-22 | 1991-10-08 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit devices |
JPH02353A (en) * | 1989-02-13 | 1990-01-05 | Seiko Epson Corp | Cmos type semiconductor device |
JPH05308129A (en) * | 1991-12-26 | 1993-11-19 | Seiko Epson Corp | Insulated gate type field effect transistor |
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Legal Events
Date | Code | Title | Description |
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FPAY | Renewal fee payment |
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FPAY | Renewal fee payment |
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LAPS | Cancellation because of no payment of annual fees |