JPS53118375A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53118375A
JPS53118375A JP3315877A JP3315877A JPS53118375A JP S53118375 A JPS53118375 A JP S53118375A JP 3315877 A JP3315877 A JP 3315877A JP 3315877 A JP3315877 A JP 3315877A JP S53118375 A JPS53118375 A JP S53118375A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
semiconductor layer
mis
adjust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3315877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6110992B2 (enExample
Inventor
Yoshiiku Togei
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3315877A priority Critical patent/JPS53118375A/ja
Publication of JPS53118375A publication Critical patent/JPS53118375A/ja
Publication of JPS6110992B2 publication Critical patent/JPS6110992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3315877A 1977-03-25 1977-03-25 Manufacture of semiconductor device Granted JPS53118375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3315877A JPS53118375A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3315877A JPS53118375A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53118375A true JPS53118375A (en) 1978-10-16
JPS6110992B2 JPS6110992B2 (enExample) 1986-04-01

Family

ID=12378753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3315877A Granted JPS53118375A (en) 1977-03-25 1977-03-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53118375A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (ja) * 1983-08-25 1985-04-19 Tadahiro Omi 半導体集積回路
JPS63237571A (ja) * 1987-03-26 1988-10-04 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH0521794A (ja) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH09270521A (ja) * 1996-12-09 1997-10-14 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2009004733A (ja) * 2007-05-18 2009-01-08 Canon Inc インバータの作製方法及びインバータ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068654A (ja) * 1983-08-25 1985-04-19 Tadahiro Omi 半導体集積回路
JPS63237571A (ja) * 1987-03-26 1988-10-04 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH0521794A (ja) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH09270521A (ja) * 1996-12-09 1997-10-14 Seiko Epson Corp 薄膜トランジスタの製造方法
JP2009004733A (ja) * 2007-05-18 2009-01-08 Canon Inc インバータの作製方法及びインバータ

Also Published As

Publication number Publication date
JPS6110992B2 (enExample) 1986-04-01

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