JPS53110482A - Non-volatile semiconductor memory element and its production - Google Patents

Non-volatile semiconductor memory element and its production

Info

Publication number
JPS53110482A
JPS53110482A JP2628477A JP2628477A JPS53110482A JP S53110482 A JPS53110482 A JP S53110482A JP 2628477 A JP2628477 A JP 2628477A JP 2628477 A JP2628477 A JP 2628477A JP S53110482 A JPS53110482 A JP S53110482A
Authority
JP
Japan
Prior art keywords
memory element
production
semiconductor memory
volatile semiconductor
trap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2628477A
Other languages
Japanese (ja)
Inventor
Katsuhiro Tsukamoto
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2628477A priority Critical patent/JPS53110482A/en
Publication of JPS53110482A publication Critical patent/JPS53110482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To make a memory element of uniform characteristics by implanting impurity ions of groups III or V in the specified positions within the insulation film over the intermediate region of source and drain thereby making a trap.
JP2628477A 1977-03-09 1977-03-09 Non-volatile semiconductor memory element and its production Pending JPS53110482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2628477A JPS53110482A (en) 1977-03-09 1977-03-09 Non-volatile semiconductor memory element and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2628477A JPS53110482A (en) 1977-03-09 1977-03-09 Non-volatile semiconductor memory element and its production

Publications (1)

Publication Number Publication Date
JPS53110482A true JPS53110482A (en) 1978-09-27

Family

ID=12188980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2628477A Pending JPS53110482A (en) 1977-03-09 1977-03-09 Non-volatile semiconductor memory element and its production

Country Status (1)

Country Link
JP (1) JPS53110482A (en)

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