JPS53108784A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108784A
JPS53108784A JP2360677A JP2360677A JPS53108784A JP S53108784 A JPS53108784 A JP S53108784A JP 2360677 A JP2360677 A JP 2360677A JP 2360677 A JP2360677 A JP 2360677A JP S53108784 A JPS53108784 A JP S53108784A
Authority
JP
Japan
Prior art keywords
semiconductor device
buried region
substrate
region
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2360677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6216025B2 (enrdf_load_stackoverflow
Inventor
Mitsutoshi Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2360677A priority Critical patent/JPS53108784A/ja
Publication of JPS53108784A publication Critical patent/JPS53108784A/ja
Publication of JPS6216025B2 publication Critical patent/JPS6216025B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/652—Integrated injection logic using vertical injector structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
JP2360677A 1977-03-04 1977-03-04 Semiconductor device Granted JPS53108784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2360677A JPS53108784A (en) 1977-03-04 1977-03-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2360677A JPS53108784A (en) 1977-03-04 1977-03-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53108784A true JPS53108784A (en) 1978-09-21
JPS6216025B2 JPS6216025B2 (enrdf_load_stackoverflow) 1987-04-10

Family

ID=12115259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2360677A Granted JPS53108784A (en) 1977-03-04 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108784A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6216025B2 (enrdf_load_stackoverflow) 1987-04-10

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