JPS5299066A - Vapor growth method of group iii-v compound semincoductor - Google Patents

Vapor growth method of group iii-v compound semincoductor

Info

Publication number
JPS5299066A
JPS5299066A JP1614576A JP1614576A JPS5299066A JP S5299066 A JPS5299066 A JP S5299066A JP 1614576 A JP1614576 A JP 1614576A JP 1614576 A JP1614576 A JP 1614576A JP S5299066 A JPS5299066 A JP S5299066A
Authority
JP
Japan
Prior art keywords
group iii
growth method
compound
semincoductor
vapor growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1614576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS557006B2 (en:Method
Inventor
Masatomo Fujimoto
Hisashi Seki
Akinori Koketsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1614576A priority Critical patent/JPS5299066A/ja
Publication of JPS5299066A publication Critical patent/JPS5299066A/ja
Publication of JPS557006B2 publication Critical patent/JPS557006B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1614576A 1976-02-17 1976-02-17 Vapor growth method of group iii-v compound semincoductor Granted JPS5299066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1614576A JPS5299066A (en) 1976-02-17 1976-02-17 Vapor growth method of group iii-v compound semincoductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1614576A JPS5299066A (en) 1976-02-17 1976-02-17 Vapor growth method of group iii-v compound semincoductor

Publications (2)

Publication Number Publication Date
JPS5299066A true JPS5299066A (en) 1977-08-19
JPS557006B2 JPS557006B2 (en:Method) 1980-02-21

Family

ID=11908319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1614576A Granted JPS5299066A (en) 1976-02-17 1976-02-17 Vapor growth method of group iii-v compound semincoductor

Country Status (1)

Country Link
JP (1) JPS5299066A (en:Method)

Also Published As

Publication number Publication date
JPS557006B2 (en:Method) 1980-02-21

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