Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15845175ApriorityCriticalpatent/JPS5283180A/en
Publication of JPS5283180ApublicationCriticalpatent/JPS5283180A/en
PURPOSE: To increase the scale of integration by reducing undesired trespassing of an SiO2 layer into an element forming region thereby reducing dead space and forming sain layer to an extremely flat surface in burying the SiO2 layer for field portions inton an Si substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP15845175A1975-12-311975-12-31Production of semiconductor device
PendingJPS5283180A
(en)