JPS5279786A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5279786A
JPS5279786A JP50157274A JP15727475A JPS5279786A JP S5279786 A JPS5279786 A JP S5279786A JP 50157274 A JP50157274 A JP 50157274A JP 15727475 A JP15727475 A JP 15727475A JP S5279786 A JPS5279786 A JP S5279786A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
electrodes
fhigh
intergration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50157274A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5549789B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yoshiiku Togei
Kunihiko Wada
Motoo Nakano
Akira Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50157274A priority Critical patent/JPS5279786A/ja
Publication of JPS5279786A publication Critical patent/JPS5279786A/ja
Publication of JPS5549789B2 publication Critical patent/JPS5549789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP50157274A 1975-12-26 1975-12-26 Semiconductor memory device Granted JPS5279786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50157274A JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50157274A JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5279786A true JPS5279786A (en) 1977-07-05
JPS5549789B2 JPS5549789B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-12-13

Family

ID=15646061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50157274A Granted JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5279786A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474684A (en) * 1977-11-03 1979-06-14 Western Electric Co Nnchannel mos memory
JPS58151062A (ja) * 1982-01-28 1983-09-08 Toshiba Corp 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474684A (en) * 1977-11-03 1979-06-14 Western Electric Co Nnchannel mos memory
JPS58151062A (ja) * 1982-01-28 1983-09-08 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPS5549789B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-12-13

Similar Documents

Publication Publication Date Title
CA1013866A (en) Process for fabricating insulated gate field effect transistor transistor structure
JPS5279679A (en) Semiconductor memory device
JPS535581A (en) Schottky gate type field effect transistor
JPS528785A (en) Semiconductor device electrode structure
JPS5419372A (en) Production of semiconductor memory
JPS5279786A (en) Semiconductor memory device
CA1017073A (en) Complementary insulated gate field effect transistor structure and process for fabricating the structure
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5389685A (en) Production of semiconductor memory element
JPS53149771A (en) Mis-type semiconductor device and its manufacture
CH552894A (fr) Procede de fabrication d'une batterie et batterie fabriquee par ce procede.
JPS51149776A (en) Semiconductor device for power
JPS52114285A (en) Mis type semiconductor device
JPS5278389A (en) Semiconductor memory device
JPS5339880A (en) Field effect type semiconductor device and its production
JPS53104183A (en) Junction gate-type field effect transistor
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS5368986A (en) Mos type transistor
JPS52119085A (en) Semiconductor memory element
JPS5299789A (en) Vertical field effect transistor
JPS535580A (en) Field effect type semiconductor device
JPS5372583A (en) Semiconductor device
JPS51148383A (en) Semiconductor device and the manufacturing method
JPS539488A (en) Production of semiconductor device
JPS51138175A (en) Method of manufacturing charge coupled device