JPS5277676A - Semiconductor rectifying device - Google Patents

Semiconductor rectifying device

Info

Publication number
JPS5277676A
JPS5277676A JP15537775A JP15537775A JPS5277676A JP S5277676 A JPS5277676 A JP S5277676A JP 15537775 A JP15537775 A JP 15537775A JP 15537775 A JP15537775 A JP 15537775A JP S5277676 A JPS5277676 A JP S5277676A
Authority
JP
Japan
Prior art keywords
rectifying device
center
semiconductor
junction part
temperature compensating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15537775A
Other languages
Japanese (ja)
Inventor
Hisanori Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15537775A priority Critical patent/JPS5277676A/en
Publication of JPS5277676A publication Critical patent/JPS5277676A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0626—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a localised breakdown region, e.g. built-in avalanching region

Abstract

PURPOSE:To improve breakdown voltage by concentrating generation of withstanding voltage deterioration at the center of semiconductor by forming depression filled with insulator, which does not reach at junction part, at the center of one surface of semiconductor substrate which has at least one junction part, and by mounting temperature compensating plate which can cover depression and also by forming temperature compensating plate on the opposite surface.
JP15537775A 1975-12-24 1975-12-24 Semiconductor rectifying device Pending JPS5277676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15537775A JPS5277676A (en) 1975-12-24 1975-12-24 Semiconductor rectifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15537775A JPS5277676A (en) 1975-12-24 1975-12-24 Semiconductor rectifying device

Publications (1)

Publication Number Publication Date
JPS5277676A true JPS5277676A (en) 1977-06-30

Family

ID=15604597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15537775A Pending JPS5277676A (en) 1975-12-24 1975-12-24 Semiconductor rectifying device

Country Status (1)

Country Link
JP (1) JPS5277676A (en)

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