JPS51138390A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51138390A
JPS51138390A JP6200275A JP6200275A JPS51138390A JP S51138390 A JPS51138390 A JP S51138390A JP 6200275 A JP6200275 A JP 6200275A JP 6200275 A JP6200275 A JP 6200275A JP S51138390 A JPS51138390 A JP S51138390A
Authority
JP
Japan
Prior art keywords
semiconductor device
high voltage
conductive material
fluorescent lamp
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6200275A
Other languages
Japanese (ja)
Inventor
Akira Yanagisawa
Ichiro Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6200275A priority Critical patent/JPS51138390A/en
Publication of JPS51138390A publication Critical patent/JPS51138390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high voltage semiconductor for use with a fluorescent lamp starter or the like by forming a semiconductor device on one surface region of a conduction type semiconductor substrate and providing an insulation film on a part of an opposite surface on which a conductive material is further deposited.
JP6200275A 1975-05-26 1975-05-26 Semiconductor device Pending JPS51138390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200275A JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200275A JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51138390A true JPS51138390A (en) 1976-11-29

Family

ID=13187501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200275A Pending JPS51138390A (en) 1975-05-26 1975-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51138390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006460A1 (en) * 1994-08-19 1996-02-29 Hitachi, Ltd. Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996006460A1 (en) * 1994-08-19 1996-02-29 Hitachi, Ltd. Semiconductor device

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