JPS5261955A - Method of making silicon single crystal bar doped with phosphorus - Google Patents
Method of making silicon single crystal bar doped with phosphorusInfo
- Publication number
- JPS5261955A JPS5261955A JP51137197A JP13719776A JPS5261955A JP S5261955 A JPS5261955 A JP S5261955A JP 51137197 A JP51137197 A JP 51137197A JP 13719776 A JP13719776 A JP 13719776A JP S5261955 A JPS5261955 A JP S5261955A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- single crystal
- silicon single
- crystal bar
- making silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2551301.3 | 1975-11-14 | ||
DE19752551301 DE2551301C3 (de) | 1975-11-14 | 1975-11-14 | Verfahren zum Herstellen von phosphordotierten Siliciumeinkristallen mit in radialer Richtung gezielter randlicher Ahreicherung des Dotierstoffes |
DE19752551281 DE2551281A1 (de) | 1975-11-14 | 1975-11-14 | Verfahren zum herstellen von phosphordotierten siliciumeinkristallen mit in radialer richtung gezielter randlicher anreicherung des dotierstoffes |
DE2551281.6 | 1975-11-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5261955A true JPS5261955A (en) | 1977-05-21 |
JPS6046072B2 JPS6046072B2 (ja) | 1985-10-14 |
Family
ID=25769618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51137197A Expired JPS6046072B2 (ja) | 1975-11-14 | 1976-11-15 | リンをドープされたシリコン単結晶棒の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4126509A (ja) |
JP (1) | JPS6046072B2 (ja) |
CA (1) | CA1085703A (ja) |
DK (1) | DK512476A (ja) |
FR (1) | FR2331378A1 (ja) |
GB (1) | GB1542868A (ja) |
SU (1) | SU793412A3 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4270972A (en) * | 1980-03-31 | 1981-06-02 | Rockwell International Corporation | Method for controlled doping semiconductor material with highly volatile dopant |
GB2082933B (en) * | 1980-09-03 | 1984-10-03 | Westinghouse Electric Corp | High voltage semiconductor materials and structures and method for their |
JPS63115766U (ja) * | 1987-01-20 | 1988-07-26 | ||
CN100351435C (zh) * | 2005-09-29 | 2007-11-28 | 天津市环欧半导体材料技术有限公司 | 区熔气相掺杂太阳能电池硅单晶的制备方法 |
CN100339513C (zh) * | 2006-04-19 | 2007-09-26 | 天津市环欧半导体材料技术有限公司 | 区熔硅单晶炉电气控制系统 |
CN1325701C (zh) * | 2006-04-26 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
CN1325702C (zh) * | 2006-04-26 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 区熔气相掺杂太阳能电池硅单晶的生产方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2854363A (en) * | 1953-04-02 | 1958-09-30 | Int Standard Electric Corp | Method of producing semiconductor crystals containing p-n junctions |
DE1164680B (de) * | 1958-05-21 | 1964-03-05 | Siemens Ag | Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit |
US3092462A (en) * | 1960-01-28 | 1963-06-04 | Philips Corp | Method for the manufacture of rods of meltable material |
NL253184A (ja) * | 1960-06-28 | |||
NL260045A (ja) * | 1961-01-13 | |||
DE1519903A1 (de) * | 1966-09-24 | 1970-02-12 | Siemens Ag | Verfahren mit tiegelfreien Zonenschmelzen eines kristallinen Stabes |
US3773499A (en) * | 1968-04-03 | 1973-11-20 | M Melnikov | Method of zonal melting of materials |
BE788026A (fr) * | 1971-08-26 | 1973-02-26 | Siemens Ag | Procede et dispositif d'introduction dirigee de matieres de dopage dansdes cristaux semiconducteurs lors d'une fusion par zones sans creuset |
DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
DE2338338C3 (de) * | 1973-07-27 | 1979-04-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
FR2257998B1 (ja) * | 1974-01-10 | 1976-11-26 | Commissariat Energie Atomique |
-
1976
- 1976-10-01 GB GB40740/76A patent/GB1542868A/en not_active Expired
- 1976-10-13 CA CA263,236A patent/CA1085703A/en not_active Expired
- 1976-10-26 US US05/735,583 patent/US4126509A/en not_active Expired - Lifetime
- 1976-11-09 FR FR7633738A patent/FR2331378A1/fr active Granted
- 1976-11-11 SU SU762418282A patent/SU793412A3/ru active
- 1976-11-12 DK DK512476A patent/DK512476A/da not_active Application Discontinuation
- 1976-11-15 JP JP51137197A patent/JPS6046072B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SU793412A3 (ru) | 1980-12-30 |
FR2331378A1 (fr) | 1977-06-10 |
FR2331378B3 (ja) | 1979-07-20 |
GB1542868A (en) | 1979-03-28 |
DK512476A (da) | 1977-05-15 |
US4126509A (en) | 1978-11-21 |
CA1085703A (en) | 1980-09-16 |
JPS6046072B2 (ja) | 1985-10-14 |
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